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Volume 36; Issue 4
Main
Semiconductors
Volume 36; Issue 4
Semiconductors
Volume 36; Issue 4
1
Changes in the state of phosphorus atoms in the silicon lattice as a result of interaction with radiation defects
V. V. Bolotov
,
G. N. Kamaev
,
L. S. Smirnov
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 52 KB
Your tags:
english, 2002
2
Ultrasonically stimulated low-temperature redistribution of impurities in silicon
I. V. Ostrovskii
,
A. B. Nadtochii
,
A. A. Podolyan
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 49 KB
Your tags:
english, 2002
3
Simulation of low-temperature arsenic diffusion from a heavily doped silicon layer
O. V. Aleksandrov
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 65 KB
Your tags:
english, 2002
4
Generalized character of the dielectric response of CdTe crystals grown from the melt
I. A. Klimenko
,
V. P. Migal’
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 51 KB
Your tags:
english, 2002
5
Effect of the radial electric field on absorption in a quantized spherical layer
V. A. Arutyunyan
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 46 KB
Your tags:
english, 2002
6
PhotoelectricC-Vprofiling of majority charge carriers and effective lifetimes of minority charge carriers in gettered GaAs wafers
V. F. Andrievskii
,
A. T. Gorelenok
,
N. A. Zagorel’skaya
,
A. V. Kamanin
,
N. M. Shmidt
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 52 KB
Your tags:
english, 2002
7
Effective electron mass in heavily doped GaAs in the ordering of impurity complexes
V. A. Bogdanova
,
N. A. Davletkil’deev
,
N. A. Semikolenova
,
E. N. Sidorov
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 74 KB
Your tags:
english, 2002
8
Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte
O. Yu. Shevchenko
,
V. F. Radantsev
,
A. M. Yafyasov
,
V. B. Bozhevol’nov
,
I. M. Ivankiv
,
A. D. Perepelkin
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 51 KB
Your tags:
english, 2002
9
Energy transfer of Ce3+→ Eu2+in the CaGa2S4compound
R. B. Dzhabbarov
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 49 KB
Your tags:
english, 2002
10
Features of optical properties of AlxGa1−xN solid solutions
V. G. Deibuk
,
A. V. Voznyi
,
M. M. Sletov
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 74 KB
Your tags:
english, 2002
11
Increase in quantum efficiency of IR emission in elastically strained narrow-gap semiconductors
S. G. Gasan-zade
,
M. V. Strikha
,
S. V. Staryi
,
G. A. Shepel’skii
,
V. A. Boiko
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 88 KB
Your tags:
english, 2002
12
Analysis and refinement of mathematical tools for modified time-of-flight method
S. P. Vikhrov
,
N. V. Vishnyakov
,
A. A. Maslov
,
V. G. Mishustin
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 52 KB
Your tags:
english, 2002
13
Causes of variation in the static current-voltage characteristics of the structures with the Me/n-n+-GaAs Schottky barrier on hydrogenation
N. A. Torkhov
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 81 KB
Your tags:
english, 2002
14
Field effect in a system consisting of electrolyte and (TlBiSe2)1−x-(TlBiS2)xsolid solution
O. Yu. Shevchenko
,
A. M. Yafyasov
,
V. B. Bozhevol’nov
,
I. M. Ivankiv
,
A. D. Perepelkin
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 68 KB
Your tags:
english, 2002
15
Effect of surface on the excitonic characteristics of semiconductors
V. G. Litovchenko
,
N. L. Dmitruk
,
D. V. Korbutyak
,
A. V. Sarikov
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 81 KB
Your tags:
english, 2002
16
Nature of the edge electroluminescence peak in the Si:(Er,O) diode breakdown mode
A. M. Emel’yanov
,
Yu. A. Nikolaev
,
N. A. Sobolev
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 66 KB
Your tags:
english, 2002
17
Control of the interband and intersubband transition energy in quantum wells using localized isoelectronic perturbations
K. Durinyan
,
A. Zatikyan
,
S. Petrosyan
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 72 KB
Your tags:
english, 2002
18
Quantized conductance in silicon quantum wires
N. T. Bagraev
,
A. D. Buravlev
,
L. E. Klyachkin
,
A. M. Malyarenko
,
W. Gehlhoff
,
V. K. Ivanov
,
I. A. Shelykh
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 389 KB
Your tags:
english, 2002
19
Exciton recombination in δ-doped type-II GaAs/AlAs superlattices
K. S. Zhuravlev
,
A. K. Sulaimanov
,
A. M. Gilinskii
,
L. S. Braginskii
,
A. I. Toropov
,
A. K. Bakarov
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 76 KB
Your tags:
english, 2002
20
The effect of adsorption on the electrical properties of structures based on oxidized porous silicon
D. I. Bilenko
,
O. Ya. Belobrovaya
,
É. A. Zharkova
,
I. B. Mysenko
,
E. I. Khasina
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 75 KB
Your tags:
english, 2002
21
Special features of electron drift in submicrometer GaAs structures
V. A. Gergel’
,
E. Yu. Kul’kova
,
V. G. Mokerov
,
M. V. Timofeev
,
G. Yu. Khrenov
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 51 KB
Your tags:
english, 2002
22
Long-term variation of electrical and photoelectric characteristics of Pd-p-InP diode structures
S. V. Slobodchikov
,
Kh. M. Salikhov
,
E. V. Russu
Journal:
Semiconductors
Year:
2002
Language:
english
File:
PDF, 63 KB
Your tags:
english, 2002
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