Increase in quantum efficiency of IR emission in...

Semiconductors 2002 / 04 Vol. 36; Iss. 4

Increase in quantum efficiency of IR emission in elastically strained narrow-gap semiconductors

S. G. Gasan-zade, M. V. Strikha, S. V. Staryi, G. A. Shepel’skii, V. A. Boiko
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Volume:
36
Language:
english
Pages:
6
DOI:
10.1134/1.1469188
Date:
April, 2002
File:
PDF, 88 KB
english, 2002
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