The effect of the concentration of the majority charge...

Semiconductors 2002 / 10 Vol. 36; Iss. 10

The effect of the concentration of the majority charge carriers and irradiation intensity on the efficiency of radiation-defect production inn-Si crystals

T. A. Pagava, Z. V. Basheleishvili
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Volume:
36
Language:
english
Pages:
2
DOI:
10.1134/1.1513847
Date:
October, 2002
File:
PDF, 35 KB
english, 2002
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