Volume 36; Issue 10

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Semiconductors
Volume 36; Issue 10

Semiconductors

Volume 36; Issue 10

1

Thermodynamic stability of bulk and epitaxial Ge1−xSnxsemiconductor alloys

V. G. Deibuk, Yu. G. Korolyuk

Journal:

Year:

2002

Language:

english

File:

PDF, 56 KB

english, 2002

2

The effect of the concentration of the majority charge carriers and irradiation intensity on the efficiency of radiation-defect production inn-Si crystals

T. A. Pagava, Z. V. Basheleishvili

Journal:

Year:

2002

Language:

english

File:

PDF, 35 KB

english, 2002

3

Dependence of the annealing kinetics ofAcenters and divacancies on temperature, particle energy, and irradiation dose forn-Si crystals

Journal:

Year:

2002

Language:

english

File:

PDF, 64 KB

english, 2002

4

Chalcogen dimers in silicon

Journal:

Year:

2002

Language:

english

File:

PDF, 110 KB

english, 2002

5

Chemical bonding and elastic constants of certain ternary III–V solid solutions

V. G. Deibuk, Ya. I. Viklyuk

Journal:

Year:

2002

Language:

english

File:

PDF, 74 KB

english, 2002

6

The nucleation of coherent semiconductor islands during the Stranski-Krastanov growth induced by elastic strains

S. A. Kukushkin, A. V. Osipov, F. Schmitt, P. Hess

Journal:

Year:

2002

Language:

english

File:

PDF, 140 KB

english, 2002

7

Investigation of vacancy-type complexes in GaN and AlN using positron annihilation

N. Yu. Arutyunov, A. V. Mikhailin, V. Yu. Davydov, V. V. Emtsev, G. A. Oganesyan, E. E. Haller

Journal:

Year:

2002

Language:

english

File:

PDF, 69 KB

english, 2002

8

The influence of shallow impurities on the temperature dependence of microhardness and the photomechanical effect in semiconductors

A. B. Gerasimov, G. D. Chiradze

Journal:

Year:

2002

Language:

english

File:

PDF, 43 KB

english, 2002

9

Neutron-irradiation-induced effects caused by divacancy clusters with a tetravacancy core in float-zone silicon

P. F. Ermolov, D. E. Karmanov, A. K. Leflat, V. M. Manankov, M. M. Merkin, E. K. Shabalina

Journal:

Year:

2002

Language:

english

File:

PDF, 104 KB

english, 2002

10

Electronic properties of liquid Tl2Te, Tl2Se, Ag2Te, Cu2Te, and Cu2Se alloys

V. M. Sklyarchuk, Yu. O. Plevachuk

Journal:

Year:

2002

Language:

english

File:

PDF, 73 KB

english, 2002

11

Dependence of GaN photoluminescence on the excitation intensity

V. N. Bessolov, V. V. Evstropov, M. E. Kompan, M. V. Mesh

Journal:

Year:

2002

Language:

english

File:

PDF, 57 KB

english, 2002

12

Photosensitivity of structures based on I-IIIn-VImternary compounds containing ordered vacancies

I. V. Bodnar’, V. Yu. Rud’, Yu. V. Rud’, M. V. Yakushev

Journal:

Year:

2002

Language:

english

File:

PDF, 55 KB

english, 2002

13

Effect of the state of the silicon surface on hydrogen sensitivity of Pd/n-Si barrier structures

V. M. Kalygina, L. S. Khludkova, V. I. Balyuba, T. A. Davydova

Journal:

Year:

2002

Language:

english

File:

PDF, 30 KB

english, 2002

14

Electrical properties of narrow-gap HgMnTe Schottky diodes

L. A. Kosyachenko, A. V. Markov, S. É. Ostapov, I. M. Rarenko, V. M. Sklyarchuk, Ye. F. Sklyarchuk

Journal:

Year:

2002

Language:

english

File:

PDF, 105 KB

english, 2002

15

Anisotropy of magnetooptical absorption of quantum dot-impurity center complexes

V. D. Krevchik, A. B. Grunin, R. V. Zaitsev

Journal:

Year:

2002

Language:

english

File:

PDF, 106 KB

english, 2002

16

Dependence of the optical gap of Si quantum dots on the dot size

Journal:

Year:

2002

Language:

english

File:

PDF, 61 KB

english, 2002

17

Dependence of scattering of quasi-two-dimensional electrons by acoustic phonons on the parameters of a GaAs/AlxGa1−xAs superlattice

S. I. Borisenko

Journal:

Year:

2002

Language:

english

File:

PDF, 54 KB

english, 2002

18

Temperature dependence of conductance of electrostatically disordered quasi-2D semiconductor systems near an insulator-metal percolation transition

A. B. Davydov, B. A. Aronzon, D. A. Bakaushin, A. S. Vedeneev

Journal:

Year:

2002

Language:

english

File:

PDF, 92 KB

english, 2002

19

Photoluminescence and recombination luminescence in amorphous molecular semiconductors doped with organic dyes

N. A. Davidenko, S. L. Studzinskii, N. A. Derevyanko, A. A. Ishchenko, Yu. A. Skryshevskii, A. J. Al-Kahdymi

Journal:

Year:

2002

Language:

english

File:

PDF, 135 KB

english, 2002

20

Crystallization of amorphous hydrogenated silicon films deposited under various conditions

O. A. Golikova, E. V. Bogdanova, U. S. Babakhodzhaev

Journal:

Year:

2002

Language:

english

File:

PDF, 55 KB

english, 2002

21

Electroluminescence from porous silicon in the cathodic reduction of persulfate ions: Degree of reversibility of the tuning effect

A. A. Saren, S. N. Kuznetsov, V. B. Pikulev, Yu. E. Gardin, V. A. Gurtov

Journal:

Year:

2002

Language:

english

File:

PDF, 59 KB

english, 2002

22

Space charge limited current in porous silicon and anatase (TiO2)

É. A. Lebedev, T. Dittrich

Journal:

Year:

2002

Language:

english

File:

PDF, 57 KB

english, 2002

23

Influence of the design and material parameters on the current-voltage characteristics of two-island single-electron chains

I. I. Abramov, S. A. Ignatenko, E. G. Novik

Journal:

Year:

2002

Language:

english

File:

PDF, 81 KB

english, 2002

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