Characteristics of planar diodes based on heavily doped...

Semiconductors 2004 / 09 Vol. 38; Iss. 9

Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

D. G. Pavel’ev, N. V. Demarina, Yu. I. Koshurinov, A. P. Vasil’ev, E. S. Semenova, A. E. Zhukov, V. M. Ustinov
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Volume:
38
Language:
english
Pages:
6
DOI:
10.1134/1.1797494
Date:
September, 2004
File:
PDF, 90 KB
english, 2004
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