Volume 38; Issue 9

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Semiconductors
Volume 38; Issue 9

Semiconductors

Volume 38; Issue 9

1

Certain features of Ga diffusion in ZnS powders

Yu. Yu. Bacherikov, I. P. Vorona, S. V. Optasyuk, V. E. Rodionov, A. A. Stadnik

Journal:

Year:

2004

Language:

english

File:

PDF, 63 KB

english, 2004

2

Impact-ionization autosolitons in compensated silicon

Journal:

Year:

2004

Language:

english

File:

PDF, 50 KB

english, 2004

3

Effect of vacuum annealing on the edge luminescence of undoped zinc selenide

V. P. Makhnii, A. M. Sletov, I. V. Tkachenko

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Year:

2004

Language:

english

File:

PDF, 39 KB

english, 2004

4

Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure

N. M. Shmidt, M. E. Levinshtein, W. V. Lundin, A. I. Besyul’kin, P. S. Kop’ev, S. L. Rumyantsev, N. Pala, M. S. Shur

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Year:

2004

Language:

english

File:

PDF, 49 KB

english, 2004

5

Elementary blue-emission bands in the luminescence spectrum of undoped gallium nitride films

A. N. Gruzintsev, A. N. Red’kin, V. I. Tatsii, C. Barthou, P. Benalloul

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Year:

2004

Language:

english

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PDF, 55 KB

english, 2004

6

Determination of the minority-carrier lifetime in silicon ingots by photoconductivity relaxation measured at microwave frequencies

P. A. Borodovskii, A. F. Buldygin, A. S. Tokarev

Journal:

Year:

2004

Language:

english

File:

PDF, 101 KB

english, 2004

7

Interfaces and roughness in a multilayer silicon structure

A. I. Belyaeva, A. A. Galuza, S. N. Kolomiets

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Year:

2004

Language:

english

File:

PDF, 246 KB

english, 2004

8

Photosensitive structures based on single-crystal silicon and phthalocyanine CuPc: Fabrication and properties

G. A. Il’chuk, N. V. Klimova, O. I. Kon’kov, S. E. Nikitin, Yu. A. Nikolaev, L. I. Rudaya, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, V. V. Shamanin, T. A. Yurre

Journal:

Year:

2004

Language:

english

File:

PDF, 80 KB

english, 2004

9

Interaction of C60molecules with the (100)W surface: Adsorption, initial stages of film growth, and thermal transformation of the adsorption layer

N. R. Gall’, E. V. Rut’kov, A. Ya. Tontegode

Journal:

Year:

2004

Language:

english

File:

PDF, 96 KB

english, 2004

10

Radiative recombination in a silicon MOS tunnel structure

N. Asli, M. I. Vexler, I. V. Grekhov, P. Seegebrecht, S. E. Tyaginov, A. F. Shulekin

Journal:

Year:

2004

Language:

english

File:

PDF, 97 KB

english, 2004

11

Potential barrier formation at a metal-semiconductor contact using selective removal of atoms

B. A. Gurovich, B. A. Aronzon, V. V. Ryl’kov, E. D. Ol’shanskii, E. A. Kuleshova, D. I. Dolgii, D. Yu. Kovalev, V. I. Filippov

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Year:

2004

Language:

english

File:

PDF, 102 KB

english, 2004

12

Special features of radiation-defect annealing in siliconp-nstructures: The role of Fe impurity atoms

Journal:

Year:

2004

Language:

english

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PDF, 80 KB

english, 2004

13

Electrical properties of metal-semiconductor nanocontacts

N. V. Vostokov, V. I. Shashkin

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Year:

2004

Language:

english

File:

PDF, 71 KB

english, 2004

14

Effect of electron-electron and electron-hole collisions on intraband population inversion of electrons in stepped quantum wells

V. L. Zerova, G. G. Zegrya, L. E. Vorob’ev

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Year:

2004

Language:

english

File:

PDF, 107 KB

english, 2004

15

Calculation of current-voltage characteristics of gallium arsenide symmetric double-barrier resonance tunneling structures with allowance for the destruction of electron-wave coherence in quantum wells

D. V. Pozdnyakov, V. M. Borzdov, F. F. Komarov

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Year:

2004

Language:

english

File:

PDF, 54 KB

english, 2004

16

Relaxation of charge carriers in quantum dots with the involvement of plasmon-phonon modes

A. V. Fedorov, A. V. Baranov

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Year:

2004

Language:

english

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PDF, 112 KB

english, 2004

17

Influence of supramolecular ordering on photophysical properties of polyamidines

E. L. Aleksandrova, M. E. Kompan, M. M. Dudkina, A. V. Tenkovtsev, E. I. Terukov

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Year:

2004

Language:

english

File:

PDF, 61 KB

english, 2004

18

Current instability with anS-shapedI-Vcharacteristic in films of a metal-polymer complex of polyamide acid with Tb+2

É. A. Lebedev, M. Ya. Goikhman, K. D. Tséndin, I. V. Podeshvo, E. I. Terukov, V. V. Kudryavtsev

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Year:

2004

Language:

english

File:

PDF, 41 KB

english, 2004

19

Carrier drift mobility in porous silicon carbide

L. P. Kazakova, M. G. Mynbaeva, K. D. Mynbaev

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Year:

2004

Language:

english

File:

PDF, 39 KB

english, 2004

20

Quartz microtubes based on macroporous silicon

E. V. Astrova, T. N. Borovinskaya, T. S. Perova, M. V. Zamoryanskaya

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Year:

2004

Language:

english

File:

PDF, 348 KB

english, 2004

21

Technique for patterning macroporous silicon and the fabrication of bars of 2D photonic crystals with vertical walls

E. V. Astrova, T. N. Borovinskaya, V. A. Tolmachev, T. S. Perova

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Year:

2004

Language:

english

File:

PDF, 376 KB

english, 2004

22

A study of deep levels in CdHgTe by analyzing the tunneling current of photodiodes

Journal:

Year:

2004

Language:

english

File:

PDF, 106 KB

english, 2004

23

Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers

I. V. Sedova, S. V. Sorokin, A. A. Toropov, V. A. Kaigorodov, S. V. Ivanov, P. S. Kop’ev, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubelevich, A. L. Gurskii, G. P. Yablonskii, Y. Dikme, H. Kalisch, A.

Journal:

Year:

2004

Language:

english

File:

PDF, 90 KB

english, 2004

24

Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

D. G. Pavel’ev, N. V. Demarina, Yu. I. Koshurinov, A. P. Vasil’ev, E. S. Semenova, A. E. Zhukov, V. M. Ustinov

Journal:

Year:

2004

Language:

english

File:

PDF, 90 KB

english, 2004

25

Behavior of graded-gap detectors of ionizing radiation under irradiation with alpha particles

L. Dapkus, K. Pozela, J. Pozela, A. Cilėnas, V. Jucienė, V. Jasutis

Journal:

Year:

2004

Language:

english

File:

PDF, 59 KB

english, 2004