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A new technology for manufacturing the dielectric isolation of elements of microelectronic devices by oxidizing grooves in single-crystal silicon
Yu. P. Snitovskii, M. G. KrasikovVolume:
39
Language:
english
Pages:
7
DOI:
10.1134/s1063739710010026
Date:
January, 2010
File:
PDF, 305 KB
english, 2010