Volume 39; Issue 1

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Russian Microelectronics
Volume 39; Issue 1

Russian Microelectronics

Volume 39; Issue 1

1

Effect of surface roughness on the temperature of a silicon wafer heated by incoherent radiation

V. I. Rudakov, V. V. Ovcharov, V. P. Prigara

Journal:

Russian Microelectronics

Year:

2010

Language:

english

File:

PDF, 383 KB

english, 2010

2

A new technology for manufacturing the dielectric isolation of elements of microelectronic devices by oxidizing grooves in single-crystal silicon

Yu. P. Snitovskii, M. G. Krasikov

Journal:

Russian Microelectronics

Year:

2010

Language:

english

File:

PDF, 305 KB

english, 2010

3

Diagnosing reliability of integrated circuits using noises and the ESD effect

M. I. Gorlov, D. Yu. Smirnov, R. M. Tikhonov

Journal:

Russian Microelectronics

Year:

2010

Language:

english

File:

PDF, 137 KB

english, 2010

4

Low-temperature pulsed CVD of ruthenium thin films for micro- and nanoelectronic applications, Part 1: Equipment and methodology

V. Yu. Vasilyev

Journal:

Russian Microelectronics

Year:

2010

Language:

english

File:

PDF, 171 KB

english, 2010

5

Determination of the diffusion length of charge minority carriers using digital oscillography of surface photovoltage

V. N. Podshivalov

Journal:

Russian Microelectronics

Year:

2010

Language:

english

File:

PDF, 229 KB

english, 2010

6

Offset voltage of an integrated magnetotransistor sensor

Journal:

Russian Microelectronics

Year:

2010

Language:

english

File:

PDF, 230 KB

english, 2010

7

Low-voltage arithmetic units based on fully depleted SOI CMOS nanotransistors

N. V. Masal’skii

Journal:

Russian Microelectronics

Year:

2010

Language:

english

File:

PDF, 207 KB

english, 2010

8

Intersubband optical transitions in InAs/GaSb quantum wells

I. A. Semenikhina, A. A. Zakharova, K. A. Chao

Journal:

Russian Microelectronics

Year:

2010

Language:

english

File:

PDF, 237 KB

english, 2010