Interface structural defects and photoluminescence...

Semiconductors 2006 / 09 Vol. 40; Iss. 9

Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

V. P. Klad’ko, S. V. Chornen’kii, A. V. Naumov, A. V. Komarov, M. Tacano, Yu. N. Sveshnikov, S. A. Vitusevich, A. E. Belyaev
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Volume:
40
Language:
english
Pages:
6
DOI:
10.1134/s1063782606090132
Date:
September, 2006
File:
PDF, 198 KB
english, 2006
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