Decrease in effective electron mobility in the channel of a...

Semiconductors 2008 / 02 Vol. 42; Iss. 2

Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased

A. A. Frantsuzov, N. I. Boyarkina, V. P. Popov
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Volume:
42
Language:
english
Pages:
5
DOI:
10.1134/s1063782608020188
Date:
February, 2008
File:
PDF, 171 KB
english, 2008
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