Volume 42; Issue 2

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Semiconductors
Volume 42; Issue 2

Semiconductors

Volume 42; Issue 2

1

Phase composition of films in a Bi-S system and formation of Bi2S3films with different substructures

Journal:

Year:

2008

Language:

english

File:

PDF, 158 KB

english, 2008

2

Role of background O and Cu impurities in the optics of ZnSe crystals in the context of the band anticrossing model

N. K. Morozova, D. A. Mideros, E. M. Gavrishchuk, V. G. Galstyan

Journal:

Year:

2008

Language:

english

File:

PDF, 285 KB

english, 2008

3

Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy

O. V. Belova, V. N. Shabanov, A. P. Kasatkin, O. A. Kuznetsov, A. N. Yablonskiĭ, M. V. Kuznetsov, V. P. Kuznetsov, A. V. Kornaukhov, B. A. Andreev, Z. F. Krasil’nik

Journal:

Year:

2008

Language:

english

File:

PDF, 244 KB

english, 2008

4

Bistable amphoteric centers in semiconductors

A. G. Nikitina, V. V. Zuev

Journal:

Year:

2008

Language:

english

File:

PDF, 214 KB

english, 2008

5

Photosensitivity of Pb1 −xSnxTe:In films in the region of intrinsic absorption

A. É. Klimov, V. N. Shumskiĭ

Journal:

Year:

2008

Language:

english

File:

PDF, 256 KB

english, 2008

6

Optical properties of AgGaxIn1 −xSe2alloys

I. V. Bodnar’

Journal:

Year:

2008

Language:

english

File:

PDF, 185 KB

english, 2008

7

Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities

M. M. Mezdrogina, V. V. Krivolapchuk, Yu. V. Kozhanova

Journal:

Year:

2008

Language:

english

File:

PDF, 299 KB

english, 2008

8

Ionization of the sulfur-relatedDXCenter in In1 −xGaxP in an electric field

Yu. K. Krutogolov

Journal:

Year:

2008

Language:

english

File:

PDF, 212 KB

english, 2008

9

Stimulated radiation of optically pumped CdxHg1 −xTe-Based heterostructures at room temperature

A. A. Andronov, Yu. N. Nozdrin, A. V. Okomel’kov, A. A. Babenko, V. S. Varavin, D. G. Ikusov, R. N. Smirnov

Journal:

Year:

2008

Language:

english

File:

PDF, 200 KB

english, 2008

10

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

G. A. Kachurin, S. G. Cherkova, V. A. Volodin, D. V. Marin, M. Deutschmann

Journal:

Year:

2008

Language:

english

File:

PDF, 207 KB

english, 2008

11

Photoluminescence of localized excitons in InGan quantum dots

S. O. Usov, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, N. N. Ledentsov

Journal:

Year:

2008

Language:

english

File:

PDF, 166 KB

english, 2008

12

Photoconductivity of thina-Si:H films

A. G. Kazanskiĭ, O. G. Koshelev, A. Yu. Sazonov, A. A. Khomich

Journal:

Year:

2008

Language:

english

File:

PDF, 235 KB

english, 2008

13

Optical studies of AlN/n-Si(100) films obtained by the method of high-frequency magnetron sputtering

N. S. Zayats, V. G. Boĭko, P. A. Gentsar, O. S. Litvin, V. P. Papusha, N. V. Sopinskiĭ

Journal:

Year:

2008

Language:

english

File:

PDF, 290 KB

english, 2008

14

Study of the conductance of ultrathin tin diphthalocyanine films

N. L. Levshin, N. N. Pronin, P. A. Forsh, S. G. Yudin

Journal:

Year:

2008

Language:

english

File:

PDF, 211 KB

english, 2008

15

Variation in optical-absorption edge in SiNxlayers with silicon clusters

M. D. Efremov, V. A. Volodin, D. V. Marin, S. A. Arzhannikova, G. N. Kamaev, S. A. Kochubeĭ, A. A. Popov

Journal:

Year:

2008

Language:

english

File:

PDF, 288 KB

english, 2008

16

Some aspects of selection of impurities improving photoelectric characteristics of chalcogenide vitreous semiconductors

I. I. Burdiyan, V. V. Cosiuc, R. A. Pynzar’

Journal:

Year:

2008

Language:

english

File:

PDF, 152 KB

english, 2008

17

High-voltage (900 V) 4H-SiC Schottky diodes with a boron-implanted guardp-njunction

I. V. Grekhov, P. A. Ivanov, N. D. Il’inskaya, O. I. Kon’kov, A. S. Potapov, T. P. Samsonova

Journal:

Year:

2008

Language:

english

File:

PDF, 287 KB

english, 2008

18

Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased

A. A. Frantsuzov, N. I. Boyarkina, V. P. Popov

Journal:

Year:

2008

Language:

english

File:

PDF, 171 KB

english, 2008

19

Effect of Auger recombination on the thermal stability of high-voltage high-power semiconductor diodes

T. T. Mnatsakanov, M. E. Levinshteĭn, A. S. Freĭdlin

Journal:

Year:

2008

Language:

english

File:

PDF, 279 KB

english, 2008

20

Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure

A. P. Astakhova, T. V. Bez”yazychnaya, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, G. I. Ryabtsev, M. A. Shchemelev, Yu. P. Yakovlev

Journal:

Year:

2008

Language:

english

File:

PDF, 213 KB

english, 2008

21

Effect of hydrogen on anisotropy of thep-GaN growth rate in the case of side-wall MOCVD

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov

Journal:

Year:

2008

Language:

english

File:

PDF, 305 KB

english, 2008

22

Diffusion of chromium into epitaxial gallium arsenide

M. D. Vilisova, E. P. Drugova, I. V. Ponomarev, V. A. Chubirko

Journal:

Year:

2008

Language:

english

File:

PDF, 272 KB

english, 2008

23

Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4Hmodification

V. V. Kozlovskiĭ, V. V. Emtsev, K. V. Emtsev, N. B. Strokan, A. M. Ivanov, V. N. Lomasov, G. A. Oganesyan, A. A. Lebedev

Journal:

Year:

2008

Language:

english

File:

PDF, 246 KB

english, 2008