Features of the spatial distribution of indium in InGaN...

Semiconductors 2008 / 05 Vol. 42; Iss. 5

Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy

V. N. Jmerik, A. M. Mizerov, T. V. Shubina, D. S. Plotnikov, M. V. Zamoryanskaya, M. A. Yagovkina, Ya. V. Domracheva, A. A. Sitnikova, S. V. Ivanov
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Volume:
42
Language:
english
Pages:
8
DOI:
10.1134/s1063782608050229
Date:
May, 2008
File:
PDF, 364 KB
english, 2008
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