Au-TiBx-n-6H-SiC Schottky barrier diodes: Specific features...

Semiconductors 2009 / 07 Vol. 43; Iss. 7

Au-TiBx-n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts

O. A. Ageev, A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, R. V. Konakova, Ya. Ya. Kudryk, P. M. Lytvyn, V. V. Milenin, A. V. Sachenko
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Volume:
43
Language:
english
Pages:
7
DOI:
10.1134/s1063782609070070
Date:
July, 2009
File:
PDF, 331 KB
english, 2009
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