Volume 43; Issue 7

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Semiconductors
Volume 43; Issue 7

Semiconductors

Volume 43; Issue 7

1

Adsorption of sodium atoms on the (111) germanium surface

Journal:

Year:

2009

Language:

english

File:

PDF, 185 KB

english, 2009

2

Establishment of specific features of electron localization atU−centers in semiconductors from thermally stimulated currents

A. G. Nikitina, V. V. Zuev

Journal:

Year:

2009

Language:

english

File:

PDF, 204 KB

english, 2009

3

Effect of the spectrum of elementary excitations on spinodal decomposition of semiconductor alloys

A. Yu. Maslov, O. V. Proshina

Journal:

Year:

2009

Language:

english

File:

PDF, 154 KB

english, 2009

4

Effect of self-compensation on the electron lifetime in gallium-doped cadmium telluride

E. V. Rabenok, M. V. Galanovich, G. F. Novikov, I. N. Odin

Journal:

Year:

2009

Language:

english

File:

PDF, 213 KB

english, 2009

5

Sensitized anti-stokes luminescence centers in AgCl crystals

M. S. Smirnov, O. V. Ovchinnikov, A. N. Latyshev, A. M. Smirnova, P. V. Novikov, M. A. Efimova

Journal:

Year:

2009

Language:

english

File:

PDF, 164 KB

english, 2009

6

Photosensitive structures based on ZnP2single crystals of monoclinic and tetragonal modifications: Fabrication and properties

V. Yu. Rud, Yu. V. Rud, A. A. Vaipolin, I. V. Bodnar, M. A. Osipiva, T. N. Ushakova

Journal:

Year:

2009

Language:

english

File:

PDF, 259 KB

english, 2009

7

Au-TiBx-n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts

O. A. Ageev, A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, R. V. Konakova, Ya. Ya. Kudryk, P. M. Lytvyn, V. V. Milenin, A. V. Sachenko

Journal:

Year:

2009

Language:

english

File:

PDF, 331 KB

english, 2009

8

Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti-n-GaN

A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, L. M. Kapitanchuk, R. V. Konakova, Ya. Ya. Kudryk, O. S. Lytvyn, V. V. Milenin, V. N. Sheremet, Yu. N. Sveshnikov

Journal:

Year:

2009

Language:

english

File:

PDF, 286 KB

english, 2009

9

Optically active centers in Si/Si1 −xGex:Er heterostructures containing Er3+ions

L. V. Krasilnikova, M. V. Strepikhova, N. A. Baidakova, Yu. N. Drozdov, Z. F. Krasilnik, V. Yu. Chalkov, V. G. Shengurov

Journal:

Year:

2009

Language:

english

File:

PDF, 248 KB

english, 2009

10

Simulation of interaction between nickel and silicon carbide during the formation of ohmic contacts

O. V. Aleksandrov, V. V. Kozlovski

Journal:

Year:

2009

Language:

english

File:

PDF, 238 KB

english, 2009

11

Determination of the mechanisms of photovoltage generation in semiconductor films from spectral dependences of the absorption coefficient and photovoltage

Journal:

Year:

2009

Language:

english

File:

PDF, 152 KB

english, 2009

12

Mechanisms of anomalous photovoltage Effect in CdTe films

Journal:

Year:

2009

Language:

english

File:

PDF, 120 KB

english, 2009

13

Spin-orbit interaction of charge carriers with impurities in aligned Ge0.99Me0.01(Me = Mn, Cr, Co, Fe) nanowires

R. B. Morgunov, A. I. Dmitriev, F. B. Mushenok, O. L. Kazakova

Journal:

Year:

2009

Language:

english

File:

PDF, 173 KB

english, 2009

14

Anisotropy of the relaxation of the electron spin caused by competition of the Rashba and Dresselhaus mechanisms

A. M. Smirnov, V. A. Oseptsova, A. V. Platonov, A. S. Gurevich, V. P. Kochereshko, A. S. Shkolnik, V. P. Evtikhiev, V. V. Petrov, Yu. K. Dolgikh, Yu. P. Efimov, S. A. Eliseev

Journal:

Year:

2009

Language:

english

File:

PDF, 251 KB

english, 2009

15

Properties of GaAsN nanowires grown by magnetron-sputtering deposition

I. P. Soshnikov, G. E. Cirlin, A. M. Nadtochii, V. G. Dubrovskii, M. A. Bukin, V. A. Petrov, V. M. Busov, S. I. Troshkov

Journal:

Year:

2009

Language:

english

File:

PDF, 272 KB

english, 2009

16

IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers

Journal:

Year:

2009

Language:

english

File:

PDF, 104 KB

english, 2009

17

Optical study of platinum-modified amorphous carbon

A. D. Remenyuk, T. K. Zvonareva, I. B. Zaharova, V. A. Tolmachev, L. V. Belyakov, T. S. Perova

Journal:

Year:

2009

Language:

english

File:

PDF, 174 KB

english, 2009

18

Electrical conductivity of amorphous films of chalcogenide compounds in high electric fields

E. N. Voronkov, S. A. Kozyukhin

Journal:

Year:

2009

Language:

english

File:

PDF, 203 KB

english, 2009

19

Effect of ethanol on optical and electrical parameters of porous silicon

V. V. Bolotov, Yu. A. Sten’kin, V. E. Roslikov, V. E. Kang, I. V. Ponomareva, S. N. Nesov

Journal:

Year:

2009

Language:

english

File:

PDF, 150 KB

english, 2009

20

Dynamics of local micro-breakdown in the Geiger mode of avalanche photodiodes

A. V. Verhovtseva, V. A. Gergel

Journal:

Year:

2009

Language:

english

File:

PDF, 225 KB

english, 2009

21

High-performance InGaP/GaAspnpδ-doped heterojunction bipolar transistor

Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo

Journal:

Year:

2009

Language:

english

File:

PDF, 194 KB

english, 2009

22

Solid-state image converters on the basis of the GaAs/ZnS structures

V. M. Kalygina, A. V. Tyazhev, T. M. Yaskevich

Journal:

Year:

2009

Language:

english

File:

PDF, 263 KB

english, 2009

23

Study of deep centers in microplasma channels of silicon epitaxial avalanche diodes

V. K. Ionychev, A. N. Rebrov

Journal:

Year:

2009

Language:

english

File:

PDF, 184 KB

english, 2009

24

Operation of a semiconductor opening switch at the pumping time of a microsecond and low current density

P. V. Vasiliev, S. K. Lyubutin, A. V. Ponomarev, S. N. Rukin, B. G. Slovikovsky, S. N. Tsyranov, S. O. Cholakh

Journal:

Year:

2009

Language:

english

File:

PDF, 140 KB

english, 2009

25

Simulation of the subnanosecond cutoff of current in high-power semiconductor diodes

S. N. Rukin, S. N. Tsyranov

Journal:

Year:

2009

Language:

english

File:

PDF, 199 KB

english, 2009

26

Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers

W. V. Lundin, A. V. Sakharov, E. E. Zavarin, M. A. Sinitsyn, A. E. Nikolaev, G. A. Mikhailovsky, P. N. Brunkov, V. V. Goncharov, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsulnikov

Journal:

Year:

2009

Language:

english

File:

PDF, 315 KB

english, 2009

27

Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride

P. G. Sennikov, S. V. Golubev, V. I. Shashkin, D. A. Pryakhin, M. N. Drozdov, B. A. Andreev, Yu. N. Drozdov, A. S. Kuznetsov, H. -J. Pohl

Journal:

Year:

2009

Language:

english

File:

PDF, 182 KB

english, 2009

28

Electron spin resonance and photoluminescence in pyrolytic silicon nitride films irradiated with argon and molecular ions

E. S. Demidov, N. A. Dobychin, V. V. Karzanov, M. O. Marychev, V. V. Sdobnyakov

Journal:

Year:

2009

Language:

english

File:

PDF, 208 KB

english, 2009