High-power diode lasers (λ = 1.7–1.8 µm) based on...

Semiconductors 2009 / 12 Vol. 43; Iss. 12

High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures

A. V. Lyutetskiy, N. A. Pikhtin, N. V. Fetisova, A. Yu. Leshko, S. O. Slipchenko, Z. N. Sokolova, Yu. A. Ryaboshtan, A. A. Marmalyuk, I. S. Tarasov
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Volume:
43
Language:
english
Pages:
4
DOI:
10.1134/s1063782609120057
Date:
December, 2009
File:
PDF, 148 KB
english, 2009
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