Volume 43; Issue 12

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Semiconductors
Volume 43; Issue 12

Semiconductors

Volume 43; Issue 12

1

Semiconductor nanowhiskers: Synthesis, properties, and applications

V. G. Dubrovskii, G. E. Cirlin, V. M. Ustinov

Journal:

Year:

2009

Language:

english

File:

PDF, 1.78 MB

english, 2009

2

Nernst-ettingshausen tensor in Sb2Te3single crystal

S. A. Nemov, G. L. Tarantasov, V. I. Proshin, M. K. Zhitinskaya, L. D. Ivanova, Yu. V. Granatkina

Journal:

Year:

2009

Language:

english

File:

PDF, 190 KB

english, 2009

3

Interaction of electrons with optical phonons localized in a quantum well

J. Požela, K. Požela, V. Jucienė, A. Sužiedėlis, A. S. Shkolnik, S. S. Mikhrin, V. S. Mikhrin

Journal:

Year:

2009

Language:

english

File:

PDF, 236 KB

english, 2009

4

Temperature and current dependences of the lasing spectrum’s width of quantum dot lasers

A. V. Savelyev, I. I. Novikov, M. V. Maximov, Yu. M. Shernyakov, A. E. Zhukov

Journal:

Year:

2009

Language:

english

File:

PDF, 204 KB

english, 2009

5

High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures

A. V. Lyutetskiy, N. A. Pikhtin, N. V. Fetisova, A. Yu. Leshko, S. O. Slipchenko, Z. N. Sokolova, Yu. A. Ryaboshtan, A. A. Marmalyuk, I. S. Tarasov

Journal:

Year:

2009

Language:

english

File:

PDF, 148 KB

english, 2009

6

Obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire

Kh. Sh-o. Kaltaev, N. S. Sidel’nikova, S. V. Nizhankovskiy, A. Y. Dan’ko, M. A. Rom, P. V. Mateychenko, M. V. Dobrotvorskaya, A. T. Budnikov

Journal:

Year:

2009

Language:

english

File:

PDF, 238 KB

english, 2009

7

Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions

P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, I. S. Tarasov

Journal:

Year:

2009

Language:

english

File:

PDF, 496 KB

english, 2009

8

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2009

Language:

english

File:

PDF, 256 KB

english, 2009