Formation of composite InGaN/GaN/InAlN quantum dots

Semiconductors 2010 / 10 Vol. 44; Iss. 10

Formation of composite InGaN/GaN/InAlN quantum dots

A. F. Tsatsul’nikov, E. E. Zavarin, N. V. Kryzhanovskaya, W. V. Lundin, A. V. Saharov, S. O. Usov, P. N. Brunkov, V. V. Goncharov, N. A. Cherkashin, M. Hytch
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Volume:
44
Language:
english
Pages:
4
DOI:
10.1134/s1063782610100167
Date:
October, 2010
File:
PDF, 593 KB
english, 2010
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