Volume 44; Issue 10

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Semiconductors
Volume 44; Issue 10

Semiconductors

Volume 44; Issue 10

1

Oxygen in Ge:Sn

L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. Riemann

Journal:

Year:

2010

Language:

english

File:

PDF, 205 KB

english, 2010

2

Mesoscopic variance of dislocation displacements in semiconductor crystals

Journal:

Year:

2010

Language:

english

File:

PDF, 179 KB

english, 2010

3

Specific features of intervalley scattering of charge carriers inn-Si at high temperatures

A. V. Fedosov, S. V. Luniov, S. A. Fedosov

Journal:

Year:

2010

Language:

english

File:

PDF, 182 KB

english, 2010

4

Numerical simulation of evolution of electron-hole avalanches and streamers in silicon in a uniform electric field

A. S. Kyuregyan

Journal:

Year:

2010

Language:

english

File:

PDF, 275 KB

english, 2010

5

Heat-transfer phenomena in alloys

S. A. Aliev, R. I. Selim-zade, S. S. Ragimov

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Year:

2010

Language:

english

File:

PDF, 191 KB

english, 2010

6

On the nature of charge carrier scattering in Ag2Se at low temperatures

Journal:

Year:

2010

Language:

english

File:

PDF, 197 KB

english, 2010

7

Repetition of the shape of the ultrafast self-modulation of the optical absorption spectrum upon varying the energy of pulse of GaAs pumping

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov

Journal:

Year:

2010

Language:

english

File:

PDF, 173 KB

english, 2010

8

Spontaneous emission of holes excited by an electric field in germanium

Ya. E. Pokrovskii, N. A. Khvalkovskii

Journal:

Year:

2010

Language:

english

File:

PDF, 139 KB

english, 2010

9

Differential capacitance of a semiconductor film

D. E. Tsurikov, A. M. Yafyasov

Journal:

Year:

2010

Language:

english

File:

PDF, 191 KB

english, 2010

10

Quantum model of electron accumulation at charged boundaries of heavily doped semiconductor films

V. A. Gergel, A. V. Verhovtseva

Journal:

Year:

2010

Language:

english

File:

PDF, 180 KB

english, 2010

11

Mixing of hole states in GaAs/AlAs(110) heterostructures

V. N. Chernyshov

Journal:

Year:

2010

Language:

english

File:

PDF, 274 KB

english, 2010

12

Analysis of mechanisms of carrier emission in thep-i-nstructures with In(Ga)As quantum dots

E. S. Shatalina, S. A. Blokhin, A. M. Nadtochy, A. S. Payusov, A. V. Savelyev, M. V. Maximov, A. E. Zhukov, N. N. Ledentsov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov

Journal:

Year:

2010

Language:

english

File:

PDF, 231 KB

english, 2010

13

Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments

I. S. Sbruev, S. B. Sbruev

Journal:

Year:

2010

Language:

english

File:

PDF, 219 KB

english, 2010

14

Simulation of relaxation times and energy spectra of the CdTe/Hg1 −xCdxTe/CdTe quantum well for variable valence band offset, well width, and compositionx

E. O. Melezhik, J. V. Gumenjuk-Sichevska, F. F. Sizov

Journal:

Year:

2010

Language:

english

File:

PDF, 254 KB

english, 2010

15

Quantum spin Hall effect in nanostructures based on cadmium fluoride

N. T. Bagraev, O. N. Guimbitskaya, L. E. Klyachkin, A. A. Koudryavtsev, A. M. Malyarenko, V. V. Romanov, A. I. Ryskin, A. S. Shcheulin

Journal:

Year:

2010

Language:

english

File:

PDF, 559 KB

english, 2010

16

Formation of composite InGaN/GaN/InAlN quantum dots

A. F. Tsatsul’nikov, E. E. Zavarin, N. V. Kryzhanovskaya, W. V. Lundin, A. V. Saharov, S. O. Usov, P. N. Brunkov, V. V. Goncharov, N. A. Cherkashin, M. Hytch

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Year:

2010

Language:

english

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PDF, 593 KB

english, 2010

17

The effect of the dynamic adsorption mode on impedance of composite structures with porous silicon

A. Yu. Karlach, G. V. Kuznetsov, S. V. Litvinenko, Yu. S. Milovanov, V. A. Skryshevsky

Journal:

Year:

2010

Language:

english

File:

PDF, 227 KB

english, 2010

18

The structure and optical properties of nanocrytalline lead sulfide films

S. I. Sadovnikov, N. S. Kozhevnikova, A. A. Rempel

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Year:

2010

Language:

english

File:

PDF, 299 KB

english, 2010

19

A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes

N. Yu. Gordeev, I. I. Novikov, A. M. Kuznetsov, Yu. M. Shernyakov, M. V. Maximov, A. E. Zhukov, A. V. Chunareva, A. S. Payusov, D. A. Livshits, A. R. Kovsh

Journal:

Year:

2010

Language:

english

File:

PDF, 212 KB

english, 2010

20

Recombination of charge carriers in the GaAs-basedp-i-ndiode

G. I. Ayzenshtat, A. Y. Yushenko, S. M. Gushchin, D. V. Dmitriev, K. S. Zhuravlev, A. I. Toropov

Journal:

Year:

2010

Language:

english

File:

PDF, 274 KB

english, 2010

21

The temperature dependence of internal optical losses in semiconductor lasers (λ = 900–920 nm)

N. A. Pikhtin, S. O. Slipchenko, I. S. Shashkin, M. A. Ladugin, A. A. Marmalyuk, A. A. Podoskin, I. S. Tarasov

Journal:

Year:

2010

Language:

english

File:

PDF, 207 KB

english, 2010

22

Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)

M. A. Ladugin, A. V. Lyutetskiy, A. A. Marmalyuk, A. A. Padalitsa, N. A. Pikhtin, A. A. Podoskin, N. A. Rudova, S. O. Slipchenko, I. S. Shashkin, A. D. Bondarev, I. S. Tarasov

Journal:

Year:

2010

Language:

english

File:

PDF, 207 KB

english, 2010

23

Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell

L. A. Kosyachenko, E. V. Grushko

Journal:

Year:

2010

Language:

english

File:

PDF, 261 KB

english, 2010

24

Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals

A. A. Wolfson, E. N. Mokhov

Journal:

Year:

2010

Language:

english

File:

PDF, 118 KB

english, 2010

25

Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface

P. A. Alexandrov, K. D. Demakov, S. G. Shemardov, Yu. Yu. Kuznetsov

Journal:

Year:

2010

Language:

english

File:

PDF, 104 KB

english, 2010

26

Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates

A. A. Lebedev, A. M. Strel’chuk, D. V. Shamshur, G. A. Oganesyan, S. P. Lebedev, M. G. Mynbaeva, A. V. Sadokhin

Journal:

Year:

2010

Language:

english

File:

PDF, 147 KB

english, 2010