Evolution of the deformation state and composition as a...

Semiconductors 2011 / 06 Vol. 45; Iss. 6

Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures

V. P. Kladko, A. V. Kuchuk, N. V. Safriuk, V. F. Machulin, A. E. Belyaev, R. V. Konakova, B. S. Yavich, B. Ya. Ber, D. Yu. Kazantsev
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Volume:
45
Language:
english
Pages:
8
DOI:
10.1134/s1063782611060121
Date:
June, 2011
File:
PDF, 472 KB
english, 2011
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