Volume 45; Issue 6

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Semiconductors
Volume 45; Issue 6

Semiconductors

Volume 45; Issue 6

1

Model of boron diffusion from gas phase in silicon carbide

O. V. Aleksandrov, E. N. Mokhov

Journal:

Year:

2011

Language:

english

File:

PDF, 288 KB

english, 2011

2

Physical properties of SnS thin films fabricated by hot wall deposition

S. A. Bashkirov, V. F. Gremenok, V. A. Ivanov

Journal:

Year:

2011

Language:

english

File:

PDF, 404 KB

english, 2011

3

Excitonic spectrum of the ZnO/ZnMgO quantum wells

M. A. Bobrov, A. A. Toropov, S. V. Ivanov, A. El-Shaer, A. Bakin, A. Waag

Journal:

Year:

2011

Language:

english

File:

PDF, 204 KB

english, 2011

4

Impurity centers of tin in glassy arsenic chalcogenides

G. A. Bordovsky, A. Yu. Dashina, A. V. Marchenko, P. P. Seregin, E. I. Terukov

Journal:

Year:

2011

Language:

english

File:

PDF, 246 KB

english, 2011

5

Electronic structure and spectral characteristics of Zn-substituted clathrate silicides

N. A. Borshch, N. S. Pereslavtseva, S. I. Kurganskii

Journal:

Year:

2011

Language:

english

File:

PDF, 520 KB

english, 2011

6

Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

P. N. Brunkov, A. A. Gutkin, M. E. Rudinsky, O. I. Ronghin, A. A. Sitnikova, A. A. Shakhmin, B. Ya. Ber, D. Yu. Kazantsev, A. Yu. Egorov, V. E. Zemlyakov, S. G. Konnikov

Journal:

Year:

2011

Language:

english

File:

PDF, 315 KB

english, 2011

7

Vacancy model of micropipe annihilation in epitaxial silicon carbide layers

S. Yu. Davydov, A. A. Lebedev

Journal:

Year:

2011

Language:

english

File:

PDF, 170 KB

english, 2011

8

Edge photoluminescence of single-crystal silicon with ap-njunction: Structures produced by high-efficiency solar cell technology

A. M. Emel’yanov

Journal:

Year:

2011

Language:

english

File:

PDF, 229 KB

english, 2011

9

Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiOx/ZrO2system containing Si nanoclusters

A. V. Ershov, D. I. Tetelbaum, I. A. Chugrov, A. I. Mashin, A. N. Mikhaylov, A. V. Nezhdanov, A. A. Ershov, I. A. Karabanova

Journal:

Year:

2011

Language:

english

File:

PDF, 214 KB

english, 2011

10

High-efficiency (η = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems

V. P. Khvostikov, A. S. Vlasov, S. V. Sorokina, N. S. Potapovich, N. Kh. Timoshina, M. Z. Shvarts, V. M. Andreev

Journal:

Year:

2011

Language:

english

File:

PDF, 302 KB

english, 2011

11

Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures

V. P. Kladko, A. V. Kuchuk, N. V. Safriuk, V. F. Machulin, A. E. Belyaev, R. V. Konakova, B. S. Yavich, B. Ya. Ber, D. Yu. Kazantsev

Journal:

Year:

2011

Language:

english

File:

PDF, 472 KB

english, 2011

12

Matrices of 960-nm vertical-cavity surface-emitting lasers

N. A. Maleev, A. G. Kuzmenkov, A. S. Shulenkov, S. A. Blokhin, M. M. Kulagina, Yu. M. Zadiranov, V. G. Tikhomirov, A. G. Gladyshev, A. M. Nadtochiy, E. V. Nikitina, J. A. Lott, V. N. Svede-Shvets, N.

Journal:

Year:

2011

Language:

english

File:

PDF, 239 KB

english, 2011

13

Features of obtaining diluted magnetic semiconductors in the system of narrow-gap GaInAsSb alloys

K. D. Moiseev, V. P. Lesnikov, V. V. Podolski, Yu. Kudriavtsev, O. Kudriavtseva, A. Escobosa, V. Sanchez-Resendiz

Journal:

Year:

2011

Language:

english

File:

PDF, 208 KB

english, 2011

14

Fabrication of improved-quality seed crystals for growth of bulk silicon carbide

M. G. Mynbaeva, P. L. Abramov, A. A. Lebedev, A. S. Tregubova, D. P. Litvin, A. V. Vasiliev, T. Yu. Chemekova, Yu. N. Makarov

Journal:

Year:

2011

Language:

english

File:

PDF, 739 KB

english, 2011

15

Energy of impurity resonance states in lead telluride with different contents of thallium impurity

S. A. Nemov, Yu. I. Ravich, V. A. Korchagin

Journal:

Year:

2011

Language:

english

File:

PDF, 173 KB

english, 2011

16

Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells

Journal:

Year:

2011

Language:

english

File:

PDF, 241 KB

english, 2011

17

Yurii Aronovich Goldberg (1939–2011)

O. V. Konstantinov, A. M. Samsonov

Journal:

Year:

2011

Language:

english

File:

PDF, 318 KB

english, 2011

18

Resonance propagation of electrons through three-barrier structures in a two-frequency electric field

A. B. Pashkovskii

Journal:

Year:

2011

Language:

english

File:

PDF, 354 KB

english, 2011

19

Circular polarization of the photoluminescence from a system of two-dimensionalA+centers in a magnetic field

P. V. Petrov, Yu. L. Ivánov, N. S. Averkiev

Journal:

Year:

2011

Language:

english

File:

PDF, 303 KB

english, 2011

20

Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/AlxIn1 −xAs and In0.2Ga0.8As/AlxGa1 −xAs heterostructures in high electric fields

J. Požela, K. Požela, R. Raguotis, V. Jucienė

Journal:

Year:

2011

Language:

english

File:

PDF, 246 KB

english, 2011

21

Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures

K. D. Shcherbachev, V. T. Bublik, V. N. Mordkovich, D. M. Pazhin

Journal:

Year:

2011

Language:

english

File:

PDF, 359 KB

english, 2011

22

Fabrication of ordered GaAs nanowhiskers using electron-beam lithography

I. P. Soshnikov, D. E. Afanas’ev, G. E. Cirlin, V. A. Petrov, E. M. Tanklevskaya, Yu. B. Samsonenko, A. D. Bouravlev, A. I. Khrebtov, V. M. Ustinov

Journal:

Year:

2011

Language:

english

File:

PDF, 1.28 MB

english, 2011

23

Anomalous long-term degradation of photoluminescence in porous silicon layers

D. F. Timokhov, F. P. Timokhov

Journal:

Year:

2011

Language:

english

File:

PDF, 136 KB

english, 2011

24

A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “a statistical method of deep-level transient spectroscopy in semiconductors”

Journal:

Year:

2011

Language:

english

File:

PDF, 133 KB

english, 2011

25

Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiOxFilms”

N. A. Vlasenko, P. F. Oleksenko, Z. L. Denisova, N. V. Sopinskii, L. I. Veligura, E. G. Gule, O. S. Litvin, M. A. Mukhlyo

Journal:

Year:

2011

Language:

english

File:

PDF, 81 KB

english, 2011

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