XANES and IR spectroscopy study of the electronic structure...

Semiconductors 2011 / 09 Vol. 45; Iss. 9

XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon onn- andp-type substrates

A. S. Lenshin, V. M. Kashkarov, P. V. Seredin, Yu. M. Spivak, V. A. Moshnikov
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Volume:
45
Language:
english
Pages:
6
DOI:
10.1134/s1063782611090168
Date:
September, 2011
File:
PDF, 411 KB
english, 2011
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