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Volume 45; Issue 9
Main
Semiconductors
Volume 45; Issue 9
Semiconductors
Volume 45; Issue 9
1
Distribution of CdSe nanoparticles synthesized in porous SiOxmatrix
Yu. Yu. Bacherikov
,
I. Z. Indutnyi
,
O. B. Okhrimenko
,
S. V. Optasyuk
,
P. E. Shepeliavyi
,
V. V. Ponamarenko
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 296 KB
Your tags:
english, 2011
2
Spectra of optical parameters in bulk and film amorphous alloys of the Se95As5system containing samarium (Sm) impurities
N. Z. Djalilov
,
G. M. Damirov
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 273 KB
Your tags:
english, 2011
3
Optical properties of quantum-confined heterostructures based on GaPxNyAs1 −x−yalloys
A. Yu. Egorov
,
N. V. Kryzhanovskaya
,
M. S. Sobolev
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 224 KB
Your tags:
english, 2011
4
The distribution of an electric field inp-njunctions of silicon edgeless detectors
V. K. Eremin
,
A. S. Naletko
,
E. M. Verbitskaya
,
I. V. Eremin
,
N. N. Egorov
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 279 KB
Your tags:
english, 2011
5
Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treatedn-GaAs surface
E. V. Erofeev
,
V. A. Kagadei
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 405 KB
Your tags:
english, 2011
6
Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy
D. O. Filatov
,
I. A. Zimovets
,
M. A. Isakov
,
V. P. Kuznetsov
,
A. V. Kornaukhov
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 241 KB
Your tags:
english, 2011
7
Protonic metallization of the monoclinic phase in VO2films
A. V. Ilinskiy
,
O. E. Kvashenkina
,
E. B. Shadrin
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 212 KB
Your tags:
english, 2011
8
Defect structure of CdxHg1 −xTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment
I. I. Izhnin
,
A. I. Izhnin
,
E. I. Fitsych
,
N. A. Smirnova
,
I. A. Denisov
,
M. Pociask
,
K. D. Mynbaev
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 174 KB
Your tags:
english, 2011
9
An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT
Jinrong Pu
,
Jiuxun Sun
,
Da Zhang
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 208 KB
Your tags:
english, 2011
10
Effect of microwave irradiation on the photoluminescence of bound excitons in CdTe:Cl single crystals
D. V. Korbutyak
,
A. P. Lotsko
,
N. D. Vakhnyak
,
L. A. Demchuna
,
R. V. Konakova
,
V. V. Milenin
,
R. A. Red’ko
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 185 KB
Your tags:
english, 2011
11
Electron states in single-layer graphene containing short-range defects: The potential separable in the momentum representation
S. A. Ktitorov
,
Yu. I. Kuzmin
,
N. E. Firsova
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 243 KB
Your tags:
english, 2011
12
Thermoelectric properties of bismuth telluride nanocomposites with fullerene
V. A. Kulbachinskii
,
V. G. Kytin
,
V. D. Blank
,
S. G. Buga
,
M. Yu. Popov
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 320 KB
Your tags:
english, 2011
13
Conductivity compensation inp-6H-SiC in irradiation with 8-MeV protons
A. A. Lebedev
,
V. V. Kozlovski
,
S. V. Belov
,
E. V. Bogdanova
,
G. A. Oganesyan
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 178 KB
Your tags:
english, 2011
14
Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT
T. R. Lenka
,
A. K. Panda
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 377 KB
Your tags:
english, 2011
15
XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon onn- andp-type substrates
A. S. Lenshin
,
V. M. Kashkarov
,
P. V. Seredin
,
Yu. M. Spivak
,
V. A. Moshnikov
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 411 KB
Your tags:
english, 2011
16
Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2–300 K
Yu. V. Shaldin
,
S. Matyjasik
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 253 KB
Your tags:
english, 2011
17
Photoluminescence in silicon implanted with silicon ions at amorphizing doses
N. A. Sobolev
,
A. E. Kalyadin
,
R. N. Kyutt
,
V. I. Sakharov
,
I. T. Serenkov
,
E. I. Shek
,
V. V. Afrosimov
,
D. I. Tetel’baum
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 190 KB
Your tags:
english, 2011
18
A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters
F. Y. Soldatenkov
,
S. V. Sorokina
,
N. Kh. Timoshina
,
V. P. Khvostikov
,
Y. M. Zadiranov
,
M. G. Rastegaeva
,
A. A. Usikova
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 439 KB
Your tags:
english, 2011
19
Synthesis of the lead, arsenic, and bismuth chalcogenides with liquid encapsulation
B. A. Tallerchik
,
S. B. Boiko
,
S. V. Shtelmah
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 519 KB
Your tags:
english, 2011
20
Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles
Jung-Hui Tsai
,
Der-Feng Guo
,
Wen-Shiung Lour
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 163 KB
Your tags:
english, 2011
21
Specific features of photoluminescence properties of copper-doped cadmium selenide quantum dots
G. I. Tselikov
,
S. G. Dorofeev
,
P. N. Tananaev
,
V. Yu. Timoshenko
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 206 KB
Your tags:
english, 2011
22
Effect of iron impurities on the photoluminescence and photoconductivity of ZnSe crystals in the visible spectral region
Yu. F. Vaksman
,
Yu. A. Nitsuk
,
V. V. Yatsun
,
A. S. Nasibov
,
P. V. Shapkin
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 176 KB
Your tags:
english, 2011
23
Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties
I. S. Vasil’evskii
,
G. B. Galiev
,
E. A. Klimov
,
A. L. Kvanin
,
S. S. Pushkarev
,
M. A. Pushkin
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 438 KB
Your tags:
english, 2011
24
Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures
I. S. Vasil’evskii
,
G. B. Galiev
,
E. A. Klimov
,
K. Požela
,
J. Požela
,
V. Jucienė
,
A. Sužiedėlis
,
N. Žurauskienė
,
S. Keršulis
,
V. Stankevič
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 190 KB
Your tags:
english, 2011
25
Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
D. A. Vinokurov
,
D. N. Nikolaev
,
N. A. Pikhtin
,
A. L. Stankevich
,
V. V. Shamakhov
,
A. D. Bondarev
,
N. A. Rudova
,
I. S. Tarasov
Journal:
Semiconductors
Year:
2011
Language:
english
File:
PDF, 144 KB
Your tags:
english, 2011
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