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Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2–300 K
Yu. V. Shaldin, S. MatyjasikVolume:
45
Language:
english
Pages:
7
DOI:
10.1134/s106378261109017x
Date:
September, 2011
File:
PDF, 253 KB
english, 2011