Capacitance-voltage characteristics of MIS-structures on...

Opto-Electronics Review 2010 / 09 Vol. 18; Iss. 3

Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grownin situCdTe

A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.S. Varavin, S.A. Dvoretskii, N.N. Mikhailov, Yu.G. Sidorov, M.V. Yakushev
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Volume:
18
Language:
english
Pages:
4
DOI:
10.2478/s11772-010-1024-9
Date:
September, 2010
File:
PDF, 278 KB
english, 2010
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