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Volume 18; Issue 3
Main
Opto-Electronics Review
Volume 18; Issue 3
Opto-Electronics Review
Volume 18; Issue 3
1
Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy
I.I. Izhnin
,
I.A. Denisov
,
N.A. Smirnova
,
M. Pociask
,
K.D. Mynbaev
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 215 KB
Your tags:
english, 2010
2
Field effect transistors for terahertz detection - silicon versus III–V material issue
W. Knap
,
H. Videlier
,
S. Nadar
,
D. Coquillat
,
N. Dyakonova
,
F. Teppe
,
M. Bialek
,
M. Grynberg
,
K. Karpierz
,
J. Lusakowski
,
K. Nogajewski
,
D. Seliuta
,
I. Kašalynas
,
G. Valušis
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 358 KB
Your tags:
english, 2010
3
Changes in 8–12 μm CdxHg1−xTe photodiode arrays caused by fast neutron irradiation
I.O. Lysiuk
,
J.V. Gumenjuk-Sichevska
,
S.A. Dvoretsky
,
V.S. Varavin
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 166 KB
Your tags:
english, 2010
4
The study of HgCdTe MBE-grown structure with ion milling
M.M. Pociask
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 223 KB
Your tags:
english, 2010
5
Linear HgCdTe IR FPA 288×4 with bidirectional scanning
V.V. Vasilyev
,
A.V. Predein
,
V.S. Varavin
,
N.N. Mikhailov
,
S.A. Dvoretsky
,
J.V. Gumenjuk-Sichevska
,
A.G. Golenkov
,
V.P. Reva
,
I.V. Sabinina
,
Yu.G. Sidorov
,
A.O. Susliakov
,
F.F. Sizov
,
A.L Aseev
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 1.66 MB
Your tags:
english, 2010
6
Uncooled MWIR and LWIR photodetectors in Poland
J. Piotrowski
,
J. Pawluczyk
,
A. Piotrowski
,
W. Gawron
,
M. Romanis
,
K. Kłos
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 1.47 MB
Your tags:
english, 2010
7
Control of acceptor doping in MOCVD HgCdTe epilayers
P. Madejczyk
,
A. Piotrowski
,
K. Kłos
,
W. Gawron
,
J. Rutkowski
,
A. Rogalski
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 1.26 MB
Your tags:
english, 2010
8
Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grownin situCdTe
A.V. Voitsekhovskii
,
S.N. Nesmelov
,
S.M. Dzyadukh
,
V.S. Varavin
,
S.A. Dvoretskii
,
N.N. Mikhailov
,
Yu.G. Sidorov
,
M.V. Yakushev
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 278 KB
Your tags:
english, 2010
9
History of HgTe-based photodetectors in Poland
A. Rogalski
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 1.16 MB
Your tags:
english, 2010
10
Detection of terahertz and sub-terahertz wave radiation based on hot-carrier effect in narrow-gap Hg1−xCdxTe
V. Zabudsky
,
V. Dobrovolsky
,
N. Momot
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 411 KB
Your tags:
english, 2010
11
Transport studies of MBE-grown InAs/GaSb superlattices
F. Szmulowicz
,
H.J. Haugan
,
S. Elhamri
,
G.J. Brown
,
W.C. Mitchel
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 241 KB
Your tags:
english, 2010
12
Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides
H. Zogg
,
M. Rahim
,
A. Khiar
,
M. Fill
,
F. Felder
,
N. Quack
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 1.14 MB
Your tags:
english, 2010
13
Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe
A.V. Voitsekhovskii
,
S.N. Nesmelov
,
S.M. Dzyadukh
,
V.S. Varavin
,
S.A. Dvoretskii
,
N.N. Mikhailov
,
Yu.G. Sidorov
,
M.V. Yakushev
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 262 KB
Your tags:
english, 2010
14
Energy-band diagrams and capacity-voltage characteristics of CdxHg1−xTe-based variband structures calculated with taking into account dependence of electron affinity on a composition
A.V. Voitsekhovskii
,
D.I. Gorn
,
S.N. Nesmelov
,
A.P. Kokhanenko
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 392 KB
Your tags:
english, 2010
15
320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter
V.V. Vasilyev
,
V.S. Varavin
,
S.A. Dvoretsky
,
I.V. Marchishin
,
N.N. Mikhailov
,
A.V. Predein
,
V.G. Remesnik
,
I.V. Sabinina
,
Yu.G. Sidorov
,
A.O. Susliakov
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 578 KB
Your tags:
english, 2010
16
A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer
S. Chowdhury
,
S. Adhikary
,
N. Halder
,
S. Chakrabarti
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 1.02 MB
Your tags:
english, 2010
17
THz/sub-THz bolometer based on electron heating in a semiconductor waveguide
V. Dobrovolsky
,
F. Sizov
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 909 KB
Your tags:
english, 2010
18
Nature of gallium deep centres in lead telluride based semiconductors
T.L. Petrenko
,
S.V. Plyatsko
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 1.05 MB
Your tags:
english, 2010
19
High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes
M. Kopytko
,
K. Jóźwikowski
,
A. Jóźwikowska
,
A. Rogalski
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 370 KB
Your tags:
english, 2010
20
Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe
S.G. Gasan-Zade
,
M.V. Strikha
,
G.A. Shepelskii
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 285 KB
Your tags:
english, 2010
21
Foreword
F.F. Sizov
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 103 KB
Your tags:
english, 2010
22
Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage
S. Sengupta
,
S.Y. Shah
,
N. Halder
,
S. Chakrabarti
Journal:
Opto-Electronics Review
Year:
2010
Language:
english
File:
PDF, 1.39 MB
Your tags:
english, 2010
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