Compositional change near the mask edge in selective InGaAs...

Journal of Crystal Growth 1996 Vol. 158; Iss. 4

Compositional change near the mask edge in selective InGaAs growth by low-temperature MOCVD

Minoru Ida, Naoteru Shigekawa, Tomofumi Furuta, Hiroshi Ito, Takashi Kobayashi
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Volume:
158
Year:
1996
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(95)00542-0
File:
PDF, 430 KB
english, 1996
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