Volume 158; Issue 4

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Journal of Crystal Growth
Volume 158; Issue 4

Journal of Crystal Growth

Volume 158; Issue 4

1

Study of the band offset for ZnSe(100)GaAs(100) heterojunctions grown by hot wall epitaxy

Yi Yang, Yukun Yang, Wangcheng Li, Wenming Li, Lei Yu, Xin Xiong, Shanli Wang, Helan Huang

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 254 KB

english, 1996

2

Dependence of lysozyme growth kinetics on step sources and impurities

P.G. Vekilov, F. Rosenberger

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 862 KB

english, 1996

3

Three-dimensional model of any shape face disappearance in crystal habit

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 472 KB

english, 1996

4

Facet morphology response to nonuniformities in nutrient and impurity supply. II. Numerical simulations

Hong Lin, Peter G. Vekilov, Franz Rosenberger

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 601 KB

english, 1996

5

A RHEED study of temperature dependence of homoepitaxy of SnTe(111)

K. Nakajima, Y. Fujii, K. Kimura, M. Mannami

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 283 KB

english, 1996

6

Undoped Al0.48In0.52As grown by metalorganic chemical vapor deposition as the current-blocking layer of laser diodes

T. Kimura, S. Ochi, T. Ishida, E. Ishimura, T. Sonoda, Y. Mihashi, S. Takamiya, W. Susaki

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 467 KB

english, 1996

7

Thermocapillary convection during floating-zone silicon growth with a uniform or non-uniform magnetic field

T.E. Morthland, J.S. Walker

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 607 KB

english, 1996

8

New susceptor arrangement for the epitaxial growth of β-SiC on silicon

Waldemar von Münch, Ulrich Ruhnau

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

9

Growth of lithium triborate crystals. I. Mathematical model

C. Parfeniuk, I.V. Samarasekera, F. Weinberg

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 615 KB

english, 1996

10

Growth of lithium triborate crystals. II. Experimental results

C. Parfeniuk, I.V. Samarasekera, F. Weinberg, J. Edel, K. Fjeldsted, B. Lent

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 938 KB

english, 1996

11

Raman microprobe assessment of low-pressure chemical vapor deposition-grown 4HSiC epilayers

C.C. Tin, R. Hu, J. Liu, Y. Vohra, Z.C. Feng

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 359 KB

english, 1996

12

Epitaxial growth of 3CSiC on Si(111) from hexamethyldisilane

C.H. Wu, C. Jacob, X.J. Ning, S. Nishino, P. Pirouz

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 935 KB

english, 1996

13

Deposition and characterization of cadmium sulfide thin films by chemical bath deposition

Paul O'Brien, Tahir Saeed

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 571 KB

english, 1996

14

Three-parameter distribution function fit to growth rate dispersion among small crystals

A.M. Zikic, R.I. Ristic, J.N. Sherwood

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 508 KB

english, 1996

15

Interface optimization of AlInPGaAs multiple quantum wells grown by gas source molecular beam epitaxy

J.M. Kuo, H.C. Kuo, J.Y. Cheng, Y.C. Wang, Y. Lu, W.E. Mayo

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 445 KB

english, 1996

16

Some effects of indium composition on pseudomorphic InxGa1 − xAsIn0.52Al0.48As modulation-doped heterostructures grown by molecular beam epitaxy

S.F. Yoon, Y.B. Miao, K. Radhakrishnan, H.L. Duan

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 407 KB

english, 1996

17

Growth of βII-Li3VO4 single crystals by the floating zone technique with the aid of a heat reservoir

Wataru Itoyama, Kazuake Iishi, Sin'ichi Sakata

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 500 KB

english, 1996

18

Effect of crucible materials on impurities in LPE GaAs

L. Mo, K.S.A. Butcher, D. Alexiev

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 366 KB

english, 1996

19

Analysis of interrupted growth strategies for cadmium telluride in an unseeded vertical Bridgman system

Satheesh Kuppurao, Simon Brandon, Jeffrey J. Derby

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 779 KB

english, 1996

20

Solution growth of InGaAlP on Al-pre-deposited GaAs (100) substrates

Takamasa Kato, Takashi Matsumoto, Hiroyuki Ogura, Tetsuro Ishida

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

21

Low concentration GaSb grown from Sb-rich solutions by liquid phase epitaxy in the presence of erbium

Yuh-Maoh Sun, Meng-Chyi Wu, Yuan-Tzu Ting

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 387 KB

english, 1996

22

Carbon incorporation in InGaAs grown on (311)A oriented substrates by metalorganic chemical vapor deposition

Hiroshi Ito, Kenji Kurishima, Noriyuki Watanabe

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 537 KB

english, 1996

23

Studies on correlation between the quality of GaAs LEC crystals and the inert gas pressure

M. Seifert, M. Neubert, W. Ulrici, B. Wiedemann, J. Donecker, J. Kluge, E. Wolf, D. Klinger, P. Rudolph

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 682 KB

english, 1996

24

Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy

T.S. Cheng, C.T. Foxon, L.C. Jenkins, S.E. Hooper, J.W. Orton, S.V. Novikov, T.B. Popova, V.V. Tret'yakov

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 295 KB

english, 1996

25

Author index

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 379 KB

english, 1996

26

Subject index

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 117 KB

english, 1996

27

Compositional change near the mask edge in selective InGaAs growth by low-temperature MOCVD

Minoru Ida, Naoteru Shigekawa, Tomofumi Furuta, Hiroshi Ito, Takashi Kobayashi

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 430 KB

english, 1996