A New Buried-Oxide-In-Drift-Region Trench MOSFET With...

IEEE Electron Device Letters 2009 Vol. 30; Iss. 9

A New Buried-Oxide-In-Drift-Region Trench MOSFET With Improved Breakdown Voltage

Saxena, R.S., Kumar, M.J.
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Volume:
30
Year:
2009
Language:
english
Pages:
3
DOI:
10.1109/led.2009.2026918
File:
PDF, 354 KB
english, 2009
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