Volume 30; Issue 9

IEEE Electron Device Letters

Volume 30; Issue 9

1

A New Buried-Oxide-In-Drift-Region Trench MOSFET With Improved Breakdown Voltage

Saxena, R.S., Kumar, M.J.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 354 KB

english, 2009

2

High-Gain SiC MESFETs Using Source-Connected Field Plates

Sriram, S., Hagleitner, H., Namishia, D., Alcorn, T., Smith, T., Pulz, B.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 150 KB

english, 2009

3

Passivation of a (100) Silicon Surface by Silicon Dioxide Grown in Nitric Acid

Grant, N.E., McIntosh, K.R.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 121 KB

english, 2009

4

Novel Thermally Stable Single-Component Organic-Memory Cell Based on Oxotitanium Phthalocyanine Material

Yongbian Kuang,, Ru Huang,, Yu Tang,, Wei Ding,, Zhe Yu,, Ying Ma,, Lijie Zhang,, Dake Wu,, Yongqiang Wen,, Yanlin Song

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 379 KB

english, 2009

5

Photosensitive Inverter and Ring Oscillator With Pseudodepletion Mode Load for LCD Applications

Sung Hun Jin,, Mun-Soo Park,, Shur, M.S.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 388 KB

english, 2009

6

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation

Chung, J.W., Saadat, O.I., Tirado, J.M., Xiang Gao,, Guo, S., Palacios, T.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 404 KB

english, 2009

7

3510-V 390-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC Lateral JFET on a Semi-Insulating Substrate

Chin-Fang Huang,, Cheng-Li Kan,, Tian-Li Wu,, Meng-Chia Lee,, Yo-Zthu Liu,, Kung-Yen Lee,, Feng Zhao,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 320 KB

english, 2009

8

Journal:

IEEE Electron Device Letters

Language:

english

File:

PDF, 347 KB

english,

9

On Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Biaxially Tensile-Strained Si MOSFETs

Yi Zhao,, Takenaka, M., Takagi, S.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 270 KB

english, 2009

10

Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications

Dong-jun Seong, M. Hassan, Hyejung Choi, Joonmyoung Lee, Jaesik Yoon, Ju-bong Park, Wootae Lee, Min-suk Oh, Hyunsang Hwang

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 461 KB

english, 2009

11

Fabrication and Characterization of GaAs Solar Cells on Copper Substrates

Ming-chun Tseng, Ray-hua Horng, Yu-li Tsai, Dong-sing Wuu, Hsin-her Yu

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 129 KB

english, 2009

12

A Common Framework of NBTI Generation and Recovery in Plasma-Nitrided SiON p-MOSFETs

S. Deora, V. Maheta, A. Islam, M. Alam, S. Mahapatra

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 251 KB

english, 2009

13

Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT

S. Lin, F. Yeh, C. Cheng, A. Chin, W. Chen

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 331 KB

english, 2009

14

MILC-TFT With High-$\kappa$ Dielectrics for One-Time-Programmable Memory Application

Tsung-yu Chiang, Po-yi Kuo, Chi-ruei Yeh, Ming-wen Ma, Kuan-ti Wang, Tien-sheng Chao, Chia-chun Liao, Yi-hong Wu

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 351 KB

english, 2009

15

Charge Pumping as a Monitor of off-State TDDB in Asymmetrically Stressed Transistors

D. Varghese, M. Alam

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 299 KB

english, 2009

16

The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices

M. Grubbs, M. Deal, Y. Nishi, B. Clemens

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 133 KB

english, 2009

17

Investigation of ZnO Nanotetrapod and MgO Hybrid Field Emitter

Jin Zhang, Ke Qu, Xiaxi Yang, Lei Wei, Xiaobing Zhang, Zhiwei Zhao, Baoping Wang

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 334 KB

english, 2009

18

Lossy, R., Wurfl, J., Trankle, G., Bahat-Treidel, E.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 426 KB

english, 2009

19

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

Peng-Fei Guo,, Li-Tao Yang,, Yue Yang,, Lu Fan,, Gen-Quan Han,, Samudra, G.S., Yee-Chia Yeo,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 424 KB

english, 2009

20

Pseudo-MOSFET Drain-Current Transients: Influence of the Substrate

Kihoon Park,, Nayak, P., Schroder, D.K.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 369 KB

english, 2009

21

Hole Mobility Model With Silicon Inversion Layer Symmetry and Stress-Dependent Piezoconductance Coefficients

Bufler, F.M., Erlebach, A., Oulmane, M.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 282 KB

english, 2009

22

Electrical Characteristics of $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{TiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Nanolaminate MOS Capacitor on $p$-GaN With Post Metallization Annealing and $(\hbox{NH}_{4})_{2}\hbox{S}_{X}$ Treatments

Ko-Tao Lee,, Chih-Fang Huang,, Jeng Gong,, Bo-Heng Liou,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 310 KB

english, 2009

23

Waveguided Ge/Si Avalanche Photodiode With Separate Vertical SEG-Ge Absorption, Lateral Si Charge, and Multiplication Configuration

Shiyang Zhu,, Kah-Wee Ang,, Rustagi, S.C., Wang, J., Xiong, Y.Z., Lo, G.Q., Kwong, D.L.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 300 KB

english, 2009

24

Heterojunction Bipolar Transistor

Shao-Yen Chiu,, Jung-Hui Tsai,, Hsuan-Wei Huang,, Kun-Chieh Liang,, Tzung-Min Tsai,, Kuo-Yen Hsu,, Wen-Shung Lour,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 314 KB

english, 2009

25

Doped Epitaxial Growth on Si for High-Performance $\hbox{n}^{+}/\hbox{p}$-Junction Diode

Hyun-Yong Yu,, Nishi, Y., Saraswat, K.C., Szu-Lin Cheng,, Griffin, P.B.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 276 KB

english, 2009

26

Improvement of Electrostatic Discharge Characteristics and Optical Properties of GaN-Based Light-Emitting Diodes

Tae-Young Park,, Min-Suk Oh,, Seong-Ju Park,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 387 KB

english, 2009

27

High-Frequency ZnO Thin-Film Transistors on Si Substrates

Bayraktaroglu, B., Leedy, K., Neidhard, R.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 398 KB

english, 2009

28

A New Technique to Extract the Source/Drain Series Resistance of MOSFETs

Fleury, D., Cros, A., Bidal, G., Rosa, J., Ghibaudo, G.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 392 KB

english, 2009

29

Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories

Compagnoni, C.M., Ghidotti, M., Lacaita, A.L., Spinelli, A.S., Visconti, A.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 118 KB

english, 2009

30

Observation of Negative Differential Conductance in a Reverse-Biased Ni/Ge Schottky Diode

Husain, M.K., Li, X.V., de Groot, C.H.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 406 KB

english, 2009

31

Increase in Reverse Operation Limit by Barrier Height Control of Diamond Schottky Barrier Diode

Umezawa, H., Tatsumi, N., Shikata, S.-i., Ikeda, K., Kumaresan, R.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 165 KB

english, 2009

32

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Dielectric Layer

Donghyun Kim,, Kumar, V., Jaesun Lee,, Minjun Yan,, Dabiran, A.M., Wowchak, A.M., Chow, P.P., Adesida, I.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 235 KB

english, 2009

33

Schottky Barrier Height of Erbium Silicide on $ \hbox{Si}_{1 - x}\hbox{C}_{x}$

Alptekin, E., Ozturk, M.C., Misra, V.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 238 KB

english, 2009

34

Analog BIST Functionality for Microhotplate Temperature Sensors

Afridi, M., Montgomery, C.B., Cooper-Balis, E., Semancik, S., Kreider, K.G., Geist, J.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 261 KB

english, 2009

35

Multigate GaN RF Switches With Capacitively Coupled Contacts

Simin, G., Khan, B., Jingbo Wang,, Koudymov, A., Gaevski, M., Jain, R., Yang, J., Hu, X., Gaska, R., Shur, M.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 230 KB

english, 2009

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