A New Degradation Mechanism in High-Voltage SiC Power...

IEEE Electron Device Letters 2007 Vol. 28; Iss. 7

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

Agarwal, A., Fatima, H., Haney, S., Sei-Hyung Ryu
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Volume:
28
Year:
2007
Language:
english
Pages:
3
DOI:
10.1109/led.2007.897861
File:
PDF, 92 KB
english, 2007
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