Volume 28; Issue 7

IEEE Electron Device Letters

Volume 28; Issue 7

1

Implementation of Side Effects in Thermal Characterization of RGB Full-Color LEDs

Lan Kim, Moo Whan Shin

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 151 KB

english, 2007

2

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

Agarwal, A., Fatima, H., Haney, S., Sei-Hyung Ryu

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 92 KB

english, 2007

3

Error and Correction in Capacitance–Voltage Measurement Due to the Presence of Source and Drain

Wang, Y., Cheung, K.P., Choi, R., Brown, G.A., Lee, B.-H.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 287 KB

english, 2007

4

Parasitic Bipolar Junction Transistors in a Floating-Gate MOSFET for Fluorescence Detection

Kyeong-Sik Shin, Kyeong-Kap Paek, Jung-Ho Park, Tae-Song Kim, Byeong-Kwon Ju, Ji Yoon Kang

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 397 KB

english, 2007

5

P-Channel Germanium FinFET Based on Rapid Melt Growth

Jia Feng, Raymond Woo, Shulu Chen, Yaocheng Liu, Griffin, P.B., Plummer, J.D.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 194 KB

english, 2007

6

Carrier Transport Mechanism in a Nanoparticle-Incorporated Organic Bistable Memory Device

Heng-Tien Lin,, Zingway Pei,, Yi-Jen Chan,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 177 KB

english, 2007

7

Transport Mechanism of SiGe Dot MOS Tunneling Diodes

Kuo, P.-S., Lin, C.-H., Peng, C.-Y., Fu, Y.-C., Liu, C.W.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 164 KB

english, 2007

8

AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation

Mizutani, T., Ito, M., Kishimoto, S., Nakamura, F.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 279 KB

english, 2007

9

50-nm T-Gate InAlAs/InGaAs Metamorphic HEMTs With Low Noise and High $f_{T}$ Characteristics

B. O. Lim, M. K. Lee, T. J. Baek, M. Han, S. C. Kim, J. Rhee

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 269 KB

english, 2007

10

Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

Y. Jiang, W. Loh, D. Chan, Y. Xiong, C. Ren, Y. Lim, G. Lo, D. Kwong

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 114 KB

english, 2007

11

Effect of $\hbox{SiN}_{x}$ Gate Dielectric Deposition Power and Temperature on a-Si:H TFT Stability

A. Z. Kattamis, K. H. Cherenack, B. Hekmatshoar, I. Cheng, H. Gleskova, J. C. Sturm, S. Wagner

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 223 KB

english, 2007

12

A Novel Silicon Photovoltaic Cell Using a Low-Temperature Quasi-Epitaxial Silicon Emitter

M. Farrokh-baroughi, S. Sivoththaman

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 310 KB

english, 2007

13

Demonstration of Metal-Gated Low $V_{t}$ n-MOSFETs Using a Poly-$\hbox{Si/TaN/Dy}_{2}\hbox{O}_{3}/\hbox{SiON}$ Gate Stack With a Scaled EOT Value

Yu, H. Y., Singanamalla, R., Ragnarsson, L.-A., Chang, V. S., Cho, H.-J., Mitsuhashi, R., Adelmann, C., Van Elshocht, S., Lehnen, P., Chang, S. Z., Yin, K. M., Schram, T., Kubicek, S., De Gendt, S., A

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 242 KB

english, 2007

14

Ar Annealing for Suppression of Gate Oxide Thinning at Shallow Trench Isolation Edge

Ohashi, T., Kubota, T., Nakajima, A.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 168 KB

english, 2007

15

Stress Hybridization for Multigate Devices Fabricated on Supercritical Strained-SOI (SC-SSOI)

Collaert, N., Rooyackers, R., De Keersgieter, A., Leys, F.E., Cayrefourcq, I., Ghyselen, B., Loo, R., Jurczak, M.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 128 KB

english, 2007

16

Study of the Erase Mechanism of MANOS ($ \hbox{Metal/Al}_{2}\hbox{O}_{3}/\hbox{SiN/SiO}_{2}/\hbox{Si}$) Device

Sheng-Chih Lai,, Hang-Ting Lue,, Jong-Yu Hsieh,, Ming-Jui Yang,, Yan-Kai Chiou,, Chia-Wei Wu,, Tai-Bor Wu,, Guang-Li Luo,, Chao-Hsin Chien,, Erh-Kun Lai,, Kuang-Yeu Hsieh,, Rich Liu,, Chih

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 323 KB

english, 2007

17

Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

Aoulaiche, M., Houssa, M., Deweerd, W., Trojman, L., Conard, T., Maes, J.W., De Gendt, S., Groeseneken, G., Maes, H.E., Heyns, M.M.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 111 KB

english, 2007

18

Ferrite-Integrated On-Chip Inductors for RF ICs

Chen Yang,, Feng Liu,, Tian-Ling Ren,, Li-Tian Liu,, Guang Chen,, Xiao-Kang Guan,, Wang, A., Hai-Gang Feng,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 240 KB

english, 2007

19

Low-Temperature Passivation of Amorphous-Silicon Thin-Film Transistors With Supercritical Fluids

Tsai, Chih-Tsung, Liu, Po-Tsun, Chang, Ting-Chang, Wang, Chen-Wen, Yang, Po-Yu, Yeh, Fon-Shan

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 119 KB

english, 2007

20

Experimental and TCAD Investigation of the Two Components of the Impact Ionization MOSFET (IMOS) Switching

Mayer, F., Le Royer, C., Le Carval, G., Clavelier, L., Deleonibus, S.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 297 KB

english, 2007

21

High-Performance Self-Aligned Bottom-Gate Low-Temperature Poly-Silicon Thin-Film Transistors With Excimer Laser Crystallization

Tsai, Chun-Chien, Chen, Hsu-Hsin, Chen, Bo-Ting, Cheng, Huang-Chung

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 491 KB

english, 2007

22

Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD

Wei Zhou,, Chak Wah Tang,, Jia Zhu,, Kei May Lau,, Zeng, Y., Liu, H.G., Tao, N.G., Bolognesi, C.R.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 375 KB

english, 2007

23

Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure

Ang, Kah-Wee, Tung, Chih-Hang, Balasubramanian, N., Samudra, Ganesh S., Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 552 KB

english, 2007

24

Schottky-Barrier Height Tuning by Means of Ion Implantation Into Preformed Silicide Films Followed by Drive-In Anneal

Zhen Zhang,, Zhijun Qiu,, Ran Liu,, Ostling, M., Shi-Li Zhang,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 127 KB

english, 2007

25

Observation of Metal-Layer Stress on Si Nanowires in Gate-All-Around High- $\kappa$/Metal-Gate Device Structures

Singh, N., Fang, W.W., Rustagi, S.C., Budharaju, K.D., Teo, S.H.G., Mohanraj, S., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 313 KB

english, 2007

26

Limits of Performance Gain of Aligned CNT Over Randomized Network: Theoretical Predictions and Experimental Validation

Pimparkar, N., Kocabas, C., Seong Jun Kang,, Rogers, J., Alam, M.A.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 264 KB

english, 2007

27

A Novel Dual-Doping Floating-Gate (DDFG) Flash Memory Featuring Low Power and High Reliability Application

Yan Li,, Ru Huang,, Yimao Cai,, Falong Zhou,, Xiaonan Shan,, Xing Zhang,, Yangyuan Wang,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 176 KB

english, 2007

28

Improved Stability of High-Performance ZnO/ZnMgO Hetero-MISFETs

Sasa, Shigehiko, Hayafuji, Takeo, Kawasaki, Motoki, Koike, Kazuto, Yano, Mitsuaki, Inoue, Masataka

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 143 KB

english, 2007

29

Observation of Threshold-Voltage Instability in Single-Crystal Silicon TFTs on Flexible Plastic Substrate

Hao-Chih Yuan,, Celler, G.K., Zhenqiang Ma,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 162 KB

english, 2007

30

On the Enhanced Impact Ionization in Uniaxial Strained p-MOSFETs

Su, Pin, Kuo, Jack J.-Y.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 186 KB

english, 2007

31

Nonvolatile Multilevel Conductance and Memory Effect in Molecule-Based Devices

Guo, Peng, Dong, Yuan-Wei, Ji, Xin, Lu, Yin-Xiang, Xu, Wei

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 122 KB

english, 2007

32

Characteristics of Ni/Gd FUSI for NMOS Gate Electrode Applications

Bongmook Lee,, Biswas, N., Novak, S.R., Misra, V.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 203 KB

english, 2007

33

Experimental Study of Data Retention in Nitride Memories by Temperature and Field Acceleration

Compagnoni, C.M., Spinelli, A.S., Lacaita, A.L.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 113 KB

english, 2007

34

The Application of an Ultrathin ALD HfSiON Cap Layer on SiON Dielectrics for Ni-FUSI CMOS Technology Targeting at Low-Power Applications

Chang, S.Z., Yu, H.Y., Veloso, A., Lauwers, A., Delabie, A., Everaert, J-L., Kerner, C., Absil, P., Hoffmann, T., Biesemans, S.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 403 KB

english, 2007

35

Design and Fabrication of Elastic Interconnections for Stretchable Electronic Circuits

Brosteaux, D., Fabrice Axisa,, Gonzalez, M., Vanfleteren, J.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 333 KB

english, 2007

36

On-Resistance Degradations for Different Stress Conditions in High-Voltage pLEDMOS Transistor With Thick Gate Oxide

Weifeng Sun,, Hong Wu,, Longxing Shi,, Yangbo Yi,, Haisong Li,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 160 KB

english, 2007

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