Analysis of a Narrow-Base Lateral IGBT With Double Buried...

Analysis of a Narrow-Base Lateral IGBT With Double Buried Layer for Junction-Isolated Smart-Power Technologies

Bakeroot, B., Doutreloigne, J., Vanmeerbeek, P., Moens, P.
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Volume:
55
Year:
2008
Language:
english
Pages:
11
DOI:
10.1109/ted.2007.911087
File:
PDF, 1.01 MB
english, 2008
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