Volume 55; Issue 1

IEEE Transactions on Electron Devices

Volume 55; Issue 1

1

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

Zhijun Qiu, Zhen Zhang, Ostling, M., Shi-Li Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 599 KB

english, 2008

2

Low Power and Power Management for CMOS—An EDA Perspective

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 925 KB

english, 2008

3

Evaluation of RF-Stress Effect on Class-E MOS Power-Amplifier Efficiency

Yuan, J.S., Ma, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 169 KB

english, 2008

4

Detailed Study of Amorphous Silicon Ultraviolet Sensor With Chromium Silicide Window Layer

Caputo, D., de Cesare, G., Nascetti, A., Tucci, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 328 KB

english, 2008

5

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Akarvardar, K., Eggimann, C., Tsamados, D., Singh Chauhan, Y., Wan, G.C., Ionescu, A.M., Howe, R.T., Wong, H.-S.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1004 KB

english, 2008

6

Analysis of a Narrow-Base Lateral IGBT With Double Buried Layer for Junction-Isolated Smart-Power Technologies

Bakeroot, B., Doutreloigne, J., Vanmeerbeek, P., Moens, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.01 MB

english, 2008

7

A Computational Study of Vertical Partial-Gate Carbon-Nanotube FETs

Youngki Yoon, Fodor, J., Jing Guo

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 562 KB

english, 2008

8

Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices

Poli, S., Reggiani, S., Gnudi, A., Gnani, E., Baccarani, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 800 KB

english, 2008

9

Dual Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part I: Impact of Gate Metal Workfunction Engineering

Kasturi, P., Saxena, M., Gupta, M., Gupta, R.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.02 MB

english, 2008

10

Microwave Performance of Double δ-Doped High Electron Mobility Transistor With Various Lower/Upper Planar-Doped Ratio Designs

Hsien-Chin Chiu, Chung-Wen Chen, Yuan-Chang Huang

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 388 KB

english, 2008

11

A Novel Low-Power and High-Speed SOI SRAM With Actively Body-Bias Controlled (ABC) Technology for Emerging Generations

Hirano, Y., Tsujiuchi, M., Maki, Y., Iwamatsu, T., Ishii, Y., Miyanishi, A., Tsukamoto, Y., Nii, K., Ipposhi, T., Oda, H., Maegawa, S., Inoue, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 871 KB

english, 2008

12

Dual-Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part II: Impact of Gate-Dielectric Material Engineering

Kasturi, P., Saxena, M., Gupta, M., Gupta, R.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 668 KB

english, 2008

13

Low-Noise Avalanche Photodiode in Standard 0.35-μm CMOS Technology

Pancheri, L., Scandiuzzo, M., Stoppa, D., Betta, G.-F.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 213 KB

english, 2008

14

Hole Distributions in Erased NROM Devices: Profiling Method and Effects on Reliability

Padovani, A., Larcher, L., Pavan, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 777 KB

english, 2008

15

Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications

Hongfang Wang, Wang, F., Junhong Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 266 KB

english, 2008

16

Quantum Modeling of Thermoelectric Properties of Si/Ge/Si Superlattices

Bulusu, A., Walker, D.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 658 KB

english, 2008

17

SiGe HBTs With Normal High-Speed Emitter-Up and Reverse Low-Power Collector-Up Operation

Li Jen Choi, Sibaja-Hernandez, A., Venegas, R., Van Huylenbroeck, S., Decoutere, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 490 KB

english, 2008

18

A Monothically Integrated Dual-Wavelength Tunable Photodetector Based on a Taper GaAs Substrate

Jihe Lv, Hui Huang, Yongqing Huang, Xiaomin Ren, Ang Miao, Yiqun Li, Hongwei Du, Qi Wang, Shiwei Cai

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 767 KB

english, 2008

19

Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for High-Frequency Applications

Malmkvist, M., Shumin Wang, Grahn, J.V.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 326 KB

english, 2008

20

Simulation of a Low-Voltage Organic Transistor Compatible With Printing Methods

Takshi, A., Dimopoulos, A., Madden, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 352 KB

english, 2008

21

Tradeoff Characteristics Between Resistivity and Reliability for Scaled-Down Cu-Based Interconnects

Yokogawa, S., Kikuta, K., Tsuchiya, H., Takewaki, T., Suzuki, M., Toyoshima, H., Kakuhara, Y., Kawahara, N., Usami, T., Ohto, K., Fujii, K., Tsuchiya, Y., Arita, K., Motoyama, K., Tohara, M., Taiji, T

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 670 KB

english, 2008

22

Flicker-Noise Impact on Scaling of Mixed-Signal CMOS With HfSiON

Yasuda, Y., Tsu-Jae King Liu, Chenming Hu

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 519 KB

english, 2008

23

Nanometer Device Scaling in Subthreshold Logic and SRAM

Hanson, S., Mingoo Seok, Sylvester, D., Blaauw, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 353 KB

english, 2008

24

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

Takagi, S., Iisawa, T., Tezuka, T., Numata, T., Nakaharai, S., Hirashita, N., Moriyama, Y., Usuda, K., Toyoda, E., Dissanayake, S., Shichijo, M., Nakane, R., Sugahara, S., Takenaka, M., Sugiyama, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.66 MB

english, 2008

25

Miniature RF Test Structure for On-Wafer Device Testing and In-Line Process Monitoring

Ming-Hsiang Cho, Lee, R., An-Sam Peng, Chen, D., Chune-Sin Yeh, Lin-Kun Wu

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 494 KB

english, 2008

26

Low-Power and Compact Sequential Circuits With Independent-Gate FinFETs

Tawfik, S.A., Kursun, V.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.81 MB

english, 2008

27

Leakage Suppression of Low-Voltage Transient Voltage Suppressor

Sheng-Huei Dai, Chrong-Jung Lin, Ya-Chin King

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 233 KB

english, 2008

28

Fully Coupled Nonequilibrium Electron–Phonon Transport in Nanometer-Scale Silicon FETs

Rowlette, J.A., Goodson, K.E.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 950 KB

english, 2008

29

Metal Electrode/High-k Dielectric Gate-Stack Technology for Power Management

Byoung Hun Lee, Seung Chul Song, Rino Choi, Kirsch, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 607 KB

english, 2008

30

Reducing Ground-Bounce Noise and Stabilizing the Data-Retention Voltage of Power-Gating Structures

Suhwan Kim, Chang Jun Choi, Deog-Kyoon Jeong, Kosonocky, S.V., Sung Bae Park

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 680 KB

english, 2008

31

Device Design and Optimization Methodology for Leakage and Variability Reduction in Sub-45-nm FD/SOI SRAM

Mukhopadhyay, S., Keunwoo Kim, Ching-Te Chuang

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.77 MB

english, 2008

32

2-D Analytical Model for Current–Voltage Characteristics and Transconductance of AlGaN/GaN MODFETs

Miao Li, Yan Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 239 KB

english, 2008

33

An Analytical Derivation of the Density of States, Effective Mass, and Carrier Density for Achiral Carbon Nanotubes

Akinwande, D., Nishi, Y., Wong, H.-S.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 575 KB

english, 2008

34

A Novel nand Flash Memory With Asymmetric S/D Structure Using Fringe-Field-Induced Inversion Layer

Ki-Tae Park, Jong-Sun Sel, Jungdal Choi, Yunheub Song, Changhyun Kim, Kinam Kim

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 851 KB

english, 2008

35

Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays

Hojin Lee, Juhn-Suk Yoo, Chang-Dong Kim, In-Byeong Kang, Kanicki, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.10 MB

english, 2008

36

Predicting the Performance of Low-Loss On-Chip Inductors Realized Using Carbon Nanotube Bundles

Nieuwoudt, A., Massoud, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.98 MB

english, 2008

37

Characterization of Short-Wavelength-Selective a-Si:H MSM Photoconductors for Large-Area Digital-Imaging Applications

Taghibakhsh, F., Khodami, I., Karim, K.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 531 KB

english, 2008

38

Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

Roldan, J.B., Godoy, A., Gamiz, F., Balaguer, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 217 KB

english, 2008

39

Improving the Performance of Superjunction Devices Having Fixed Charge in Isolation and Termination Oxide Layers

Balaji, S., Karmalkar, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 255 KB

english, 2008

40

Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

Skotnicki, T., Fenouillet-Beranger, C., Gallon, C., Buf, F., Monfray, S., Payet, F., Pouydebasque, A., Szczap, M., Farcy, A., Arnaud, F., Clerc, S., Sellier, M., Cathignol, A., Schoellkopf, J.-P., Per

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 5.78 MB

english, 2008

41

Progressive Development of Superjunction Power MOSFET Devices

Yu Chen, Liang, Y.C., Samudra, G.S., Xin Yang, Buddharaju, K.D., Hanhua Feng

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 920 KB

english, 2008

42

Transistor-and Circuit-Design Optimization for Low-Power CMOS

Mi-Chang Chang, Chih-Sheng Chang, Chih-Ping Chao, Ken-Ichi Goto, Meikei Ieong, Lee-Chung Lu, Diaz, C.H.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.07 MB

english, 2008

43

Design in the Power-Limited Scaling Regime

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 499 KB

english, 2008

44

Variation in Transistor Performance and Leakage in Nanometer-Scale Technologies

Saxena, S., Hess, C., Karbasi, H., Rossoni, A., Tonello, S., McNamara, P., Lucherini, S., Minehane, S., Dolainsky, C., Quarantelli, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.65 MB

english, 2008

45

Nanometer MOSFET Variation in Minimum Energy Subthreshold Circuits

Verma, N., Kwong, J., Chandrakasan, A.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.80 MB

english, 2008

46

Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

Fiegna, C., Yang Yang, Sangiorgi, E., O'Neill, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 351 KB

english, 2008

47

Low-Power SRAMs in Nanoscale CMOS Technologies

Zhang, K., Hamzaoglu, F., Yih Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 693 KB

english, 2008

48

Cool Chips: Opportunities and Implications for Power and Thermal Management

Sheng-Chih Lin, Banerjee, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 936 KB

english, 2008

49

Special Issue on Device Technologies and Circuit Techniques for Power Management

Welser, J. J., Kosonocky, S., Liu, T.-J. K., Sakurai, T., Thewes, R., Zhao, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 173 KB

english, 2008

50

Variable-Body-Factor SOI MOSFET With Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control

Ohtou, T., Saraya, T., Hiramoto, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 564 KB

english, 2008

51

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 56 KB

english, 2008

52

[Front cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 184 KB

2008

53

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 61 KB

english, 2008

54

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 37 KB

english, 2008

55

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 2 KB

2008

56

2008 Symposium on VLSI Technology

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 69 KB

2008

57

2008 IEEE Radio Frequency Integrated Circuits Symposium

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 644 KB

2008

58

Order Form for Reprints

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 338 KB

2008

59

Special issue on Nanowire Electronics

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 204 KB

2008

60

Region 9 Biennial Outstanding Student Paper Award

Journal:

IEEE Transactions on Electron Devices

Year:

2008

File:

PDF, 633 KB

2008

61

Statistical Model for Random Telegraph Noise in Flash Memories

Monzio Compagnoni, C., Gusmeroli, R., Spinelli, A.S., Lacaita, A.L., Bonanomi, M., Visconti, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 274 KB

english, 2008

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски