Doping mechanism and properties of Zn-doped GaN-epitaxial...

Doping mechanism and properties of Zn-doped GaN-epitaxial layers

V. M. Andreev, M. N. Petrov, I. G. Pichugin
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Volume:
18
Year:
1983
Language:
english
Pages:
10
DOI:
10.1002/crat.2170180403
File:
PDF, 604 KB
english, 1983
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