Volume 18; Issue 4

Crystal Research and Technology

Volume 18; Issue 4
1

Masthead

Year:
1983
Language:
english
File:
PDF, 42 KB
english, 1983
3

Doping mechanism and properties of Zn-doped GaN-epitaxial layers

Year:
1983
Language:
english
File:
PDF, 604 KB
english, 1983
4

Iso-epitaxial growth of n-octacosane crystals

Year:
1983
Language:
english
File:
PDF, 486 KB
english, 1983
6

On the structure of α′m-precipitates in Al-Zn alloys

Year:
1983
Language:
english
File:
PDF, 604 KB
english, 1983
16

On batch homogeneity in horizontal CVD reactors (I). Model of heating the process gas

Year:
1983
Language:
english
File:
PDF, 604 KB
english, 1983
18

Dielectric relaxation and Freedericksz effect

Year:
1983
Language:
english
File:
PDF, 141 KB
english, 1983