MOCVD Growth and Characterization of GaN Films with...

MOCVD Growth and Characterization of GaN Films with Composite Intermediate Layer Buffer on Si Substrate

X. Zhang, S. J. Chua, Z. C. Feng, J. Chen, J. Lin
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Volume:
176
Year:
1999
Language:
english
Pages:
5
DOI:
10.1002/(sici)1521-396x(199911)176:13.0.co;2-q
File:
PDF, 169 KB
english, 1999
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