Volume 176; Issue 1

physica status solidi (a)

Volume 176; Issue 1
3

Growth of Eu Doped GaN and Electroluminescence from MIS Structure

Year:
1999
Language:
english
File:
PDF, 141 KB
english, 1999
10

Present Status of InGaN-Based Laser Diodes

Year:
1999
Language:
english
File:
PDF, 232 KB
english, 1999
14

Towards an AlGaN, Solar-Blind, p–i–n Photodetector

Year:
1999
Language:
english
File:
PDF, 147 KB
english, 1999
15

Results, Potential and Challenges of High Power GaN-Based Transistors

Year:
1999
Language:
english
File:
PDF, 143 KB
english, 1999
19

Polarization Field Determination in AlGaN/GaN HFETs

Year:
1999
Language:
english
File:
PDF, 160 KB
english, 1999
26

CW Operation of AlGaInN–GaN Laser Diodes

Year:
1999
Language:
english
File:
PDF, 188 KB
english, 1999
32

Classical and Quantum Simulations of In and Al Incorporation in GaN

Year:
1999
Language:
english
File:
PDF, 164 KB
english, 1999
40

Quantitative Model for the MBE-Growth of Ternary Nitrides

Year:
1999
Language:
english
File:
PDF, 129 KB
english, 1999
41

Spectroscopic Studies of InGaN Ternary Alloys

Year:
1999
Language:
english
File:
PDF, 202 KB
english, 1999
47

Growth Kinetics of GaN in Ammonia Atmosphere

Year:
1999
Language:
english
File:
PDF, 150 KB
english, 1999
49

(GaMg)N — New Wide Band Gap Semiconductor

Year:
1999
Language:
english
File:
PDF, 166 KB
english, 1999
52

Electrical and Photoelectronic Properties of Hexagonal GaN

Year:
1999
Language:
english
File:
PDF, 140 KB
english, 1999
54

The Low-Field Electron Mobility in Bulk AlGaN

Year:
1999
Language:
english
File:
PDF, 128 KB
english, 1999
56

Hot Electron Energy Relaxation in Gallium Nitride

Year:
1999
Language:
english
File:
PDF, 113 KB
english, 1999
61

Analysis of the Defect Structure of Epitaxial GaN

Year:
1999
Language:
english
File:
PDF, 140 KB
english, 1999
64

GaN Substrates: Growth and Characterization

Year:
1999
Language:
english
File:
PDF, 126 KB
english, 1999
67

Thick GaN Growth on GaAs(111) Substratres at 1000 °C with HVPE

Year:
1999
Language:
english
File:
PDF, 218 KB
english, 1999
72

MOCVD-Epitaxy on Free-Standing HVPE-GaN Substrates

Year:
1999
Language:
english
File:
PDF, 147 KB
english, 1999
74

346 nm Emission from AlGaN Multi-Quantum-Well Light Emitting Diode

Year:
1999
Language:
english
File:
PDF, 140 KB
english, 1999
79

Heteroepitaxy of Doped and Undoped Cubic Group III-Nitrides

Year:
1999
Language:
english
File:
PDF, 224 KB
english, 1999
84

GaN as Seen by the Industry

Year:
1999
Language:
english
File:
PDF, 141 KB
english, 1999
86

MOVPE Growth of High Quality Cubic GaN on GaAs: The Role of Growth Rates

Year:
1999
Language:
english
File:
PDF, 111 KB
english, 1999
88

Mixing Mechanism of h-GaN in c-GaN Growth on GaAs (001) Substrates

Year:
1999
Language:
english
File:
PDF, 225 KB
english, 1999
90

Growth of InGaN Alloy on Cubic GaN by Metalorganic Vapor-Phase Epitaxy

Year:
1999
Language:
english
File:
PDF, 174 KB
english, 1999
101

MOCVD Growth of GaN on LiAlO2(100) Substrates

Year:
1999
Language:
english
File:
PDF, 180 KB
english, 1999
113

New Pretreatment Method of Sapphire for GaN Deposition

Year:
1999
Language:
english
File:
PDF, 241 KB
english, 1999
121

The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers

Year:
1999
Language:
english
File:
PDF, 119 KB
english, 1999
125

Growth of Boron Nitride Thin Films on Silicon Substrates Using New Organoboron Precursors

Year:
1999
Language:
english
File:
PDF, 208 KB
english, 1999
129

In Situ Monitoring of GaN Growth in Multiwafer MOVPE Reactors

Year:
1999
Language:
english
File:
PDF, 191 KB
english, 1999
131

Remote Plasma MOCVD Growth and Processing of GaN: A Study by Real Time Ellipsometry

Year:
1999
Language:
english
File:
PDF, 188 KB
english, 1999
132

The Reactive Ion Etching of Gallium Nitride by Methylchloride/Hydrogen

Year:
1999
Language:
english
File:
PDF, 128 KB
english, 1999
134

Visible Light Control by GaN Photonic Band Gaps

Year:
1999
Language:
english
File:
PDF, 119 KB
english, 1999
138

Reduction of Ohmic Contact Resistivity on p-Type GaN by Surface Treatment

Year:
1999
Language:
english
File:
PDF, 139 KB
english, 1999
141

The Influence of Pt in a Ti—Al–Pt–Au Ohmic Contact on n-Type GaN

Year:
1999
Language:
english
File:
PDF, 166 KB
english, 1999