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New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime
N. Lakhdar, F. DjeffalVolume:
52
Year:
2012
Language:
english
Pages:
1
DOI:
10.1016/j.microrel.2011.11.014
File:
PDF, 355 KB
english, 2012