Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
T. Kawanago, T. Suzuki, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. IwaiVolume:
68
Year:
2012
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2011.10.006
File:
PDF, 820 KB
english, 2012