Volume 68; Issue none

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Solid-State Electronics
Volume 68; Issue none

Solid-State Electronics

Volume 68; Issue none

1

Simulation of organic inverter

N.P. Papadopoulos, A. Marsal, R. Picos, J. Puigdollers, A.A. Hatzopoulos

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 473 KB

english, 2012

2

Effects of applied bias voltage in tunnel junctions with ferroelectric barrier

L.B. Zhang, M.H. Tang, J.C. Li, Y.G. Xiao

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 449 KB

english, 2012

3

Energy harvesting from radio frequency propagation using piezoelectric cantilevers

Mahmoud Al Ahmad, H.N. Alshareef

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 500 KB

english, 2012

4

InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric

Hsien-Cheng Lin, Fang-Ming Lee, Yu-Chun Cheng, Kuan-Wei Lee, Feri Adriyanto, Yeong-Her Wang

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1007 KB

english, 2012

5

Characterization of single-sided gate-to-drain non-overlapped implantation nMOSFETs for multi-functional non-volatile memory applications

E.S. Jeng, Y.F. Chen, C.C. Chang, K.M. Peng, S.W. Chou, C.W. Ho, C.F. Huang, J. Gong

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 786 KB

english, 2012

6

Thermal effect on the electroluminescence of InGaN/GaN multiquantum-well light-emitting devices

Ya-Fen Wu, Hung-Pin Hsu, Tsung-Yu Liu

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 372 KB

english, 2012

7

Parasitic capacitance removal of sub-100 nm p-MOSFETs using capacitance–voltage measurements

Daniel R. Steinke, Joseph Piccirillo, Steven C. Gausepohl, Saikumar Vivekand, Martin P. Rodgers, Ji Ung Lee

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 568 KB

english, 2012

8

A comparative study for quantum transport calculations of nanosized field-effect transistors

Xiang-Wei Jiang, Shu-Shen Li, Lin-Wang Wang

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 885 KB

english, 2012

9

Influence of atomic layer deposition chemistry on high-k dielectrics for charge trapping memories

Nikolaos Nikolaou, Panagiotis Dimitrakis, Pascal Normand, Vassilios Ioannou-Sougleridis, Konstantinos Giannakopoulos, Konstantina Mergia, Kaupo Kukli, Jaakko Niinistö, Mikko Ritala, Markku Leskelä

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1.79 MB

english, 2012

10

A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS

S.N. Ong, K.S. Yeo, K.W.J. Chew, L.H.K. Chan, X.S. Loo, C.C. Boon, M.A. Do

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 667 KB

english, 2012

11

Investigation of TiO2 on AlGaAs prepared by liquid phase deposition and its application

Kuan-Wei Lee, Jung-Sheng Huang, Yu-Lin Lu, Fang-Ming Lee, Hsien-Cheng Lin, Tsu-Yi Wu, Yeong-Her Wang

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 802 KB

english, 2012

12

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

T. Kawanago, T. Suzuki, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 820 KB

english, 2012

13

Growth of Zn doped Cu(In, Ga)Se2 thin films by RF sputtering for solar cell applications

Z.Q. Li, Q.Q. Liu, J.J. Li, Z. Sun, Y.W. Chen, Z. Yang, S.M. Huang

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 833 KB

english, 2012

14

Ultraviolet photoresistors based on ZnO thin films grown by P-MBE

F.J. Liu, Z.F. Hu, J. Sun, Z.J. Li, H.Q. Huang, J.W. Zhao, X.Q. Zhang, Y.S. Wang

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 365 KB

english, 2012

15

Phosphorous passivation of the SiO2/4H–SiC interface

Y.K. Sharma, A.C. Ahyi, T. Issacs-Smith, X. Shen, S.T. Pantelides, X. Zhu, L.C. Feldman, J. Rozen, J.R. Williams

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 865 KB

english, 2012

16

N-doped ZnO based fast response ultraviolet photoconductive detector

S.S. Shinde, C.H. Bhosale, K.Y. Rajpure

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 551 KB

english, 2012

17

Thermal analysis of high power LED packages under the alternating current operation

Moo Whan Shin, Sun Ho Jang

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 448 KB

english, 2012

18

Point defect determination by eliminating frequency dispersion in C–V measurement for AlGaN/GaN heterostructure

Liang Li, Lin-An Yang, Jin-Cheng Zhang, Lin-Xia Zhang, Li-Sha Dang, Qian-Wei Kuang, Yue Hao

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 272 KB

english, 2012

19

Photo-controlled molecular growth and electrical performances of a pentacene-based organic transistor with a photo-reactive insulator

Jin-Hyuk Bae, Cherlhyun Jeong, Sin-Doo Lee, Chang-Jae Yu

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 527 KB

english, 2012

20

Explicit model for the gate tunneling current in double-gate MOSFETs

Ferney Chaves, David Jiménez, Jordi Suñé

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 803 KB

english, 2012

21

Characterization of P-channel power trench MOSFETs with polycrystalline silicon germanium gate electrode for faster switching

Rohit Dikshit, Manmohan Daggubati

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 807 KB

english, 2012

22

A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen

M. Chowdhury, B. Long, R. Jha, V. Devabhaktuni

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 376 KB

english, 2012

23

Editorial Board

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 64 KB

english, 2012

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