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Infrared spectroscopic ellipsometry applied to the characterization of ultra shallow junction on silicon and SOI
C. Defranoux, T. Emeraud, S. Bourtault, J. Venturini, P. Boher, M. Hernandez, C. Laviron, T. NoguchiVolume:
455-456
Year:
2004
Language:
english
Pages:
7
DOI:
10.1016/j.tsf.2004.02.008
File:
PDF, 826 KB
english, 2004