New fabrication technique for nano-MOS transistors with W=25 nm and L=25 nm using only conventional optical lithography
J.T. Horstmann, K.F. GoserVolume:
61-62
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0167-9317(02)00430-6
File:
PDF, 531 KB
english, 2002