Advances in the formation of C54TiSi2 with an interposed...

Microelectronic Engineering 1997 Vol. 37-38; Iss. none

Advances in the formation of C54TiSi2 with an interposed refractory metal layer: some properties

Aliette Mouroux, Wlodek Kaplan, Shi-Li Zhang, Sture Petersson
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Volume:
37-38
Year:
1997
Language:
english
Pages:
6
DOI:
10.1016/s0167-9317(97)00145-7
File:
PDF, 377 KB
english, 1997
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