Volume 37-38; Issue none

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Microelectronic Engineering
Volume 37-38; Issue none

Microelectronic Engineering

Volume 37-38; Issue none

1

Multilevel interconnection technologies and future requirements for logic applications: Invited lecture

Michel Brillouët

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 544 KB

english, 1997

2

Issues for multilevel metallization in high density circuits: Invited lecture

H. Joswig, H.J. Barth, N. Elbel, S. Penka

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 741 KB

english, 1997

3

Advanced materials for future interconnections of the future need and strategy: Invited lecture

Shyam P. Murarka

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 595 KB

english, 1997

4

Three dimensional metallization for vertically integrated circuits: Invited lecture

P. Ramm, D. Bollmann, R. Braun, R. Buchner, U. Cao-Minh, M. Engelhardt, G. Errmann, T. Graßl, K. Hieber, H. Hübner, G. Kawala, M. Kleiner, A. Klumpp, S. Kühn, C. Landesberger, H. Lezec, W. Muth, W. Pa

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 601 KB

english, 1997

5

Focused ion beam sample preparation, transmission electron microscopy and electron energy loss spectroscopy analysis of advanced CMOS silicon technology interconnections

Roland Pantel, Geoffroy Auvert, Guy Mascarin

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 608 KB

english, 1997

6

Dry etch challenges of 0.25 μm dual damascene structures

R.F. Schnabel, D. Dobuzinsky, J. Gambino, K.P. Muller, F. Wang, D.C. Perng, H. Palm

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 380 KB

english, 1997

7

Total process in 0.18 and 0.25 μm ohmic contacts: Invited lecture

Tohru Hara, S.C. Chen

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 460 KB

english, 1997

8

High aspect ratio quarter-micron electroless copper integrated technology: Invited lecture

Yosi Shacham-Diamand, Sergey Lopatin

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 655 KB

english, 1997

9

Copper CVD precursors and processes for advanced metallization: Invited lecture

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 448 KB

english, 1997

10

CVD process for copper interconnection

C. Marcadal, E. Richard, J. Torres, J. Palleau, R. Madar

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 310 KB

english, 1997

11

Conformal copper deposition in deep trenches

D. Bollmann, R. Merkel, A. Klumpp

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 448 KB

english, 1997

12

Influence of carrier gas on Cu nucleation, film properties and MOCVD reaction kinetics

J. Röber, S. Riedel, S.E. Schulz, T. Gessner

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 493 KB

english, 1997

13

Low-temperature dry etching of copper using a new chemical approach

Th. Kruck, M. Schober

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 283 KB

english, 1997

14

Mechanism studies of Cu RIE for VLSI interconnections

M. Markert, A. Bertz, T. Gessner

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 411 KB

english, 1997

15

Copper CMP evaluation: planarization issues

M. Fayolle, F. Romagna

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 328 KB

english, 1997

16

Influence of process parameters on chemical-mechanical polishing of copper

Z. Stavreva, D. Zeidler, M. Plötner, K. Drescher

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 366 KB

english, 1997

17

Stress in copper films for interconnects

Stephan Riedel, Jürgen Röber, Stefan E. Schulz, Thomas Geßner

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 301 KB

english, 1997

18

Influence of processing parameters on the selectivity in a CVD-process of copper using Cu(I)(hfac)(TMVS)

G. Friese, A. Abdul-Hak, B. Schwierzi, U. Höhne

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 323 KB

english, 1997

19

Chemical beam epitaxy of CoGa on GaAs using GaEt3 and CpCo(CO)2 as dual organometallic sources

N. Viguier, F. Maury

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 459 KB

english, 1997

20

Modeling and simulation of asymmetric stripline for multichip module applications

S.D. Lopatin, O.V. Klimchik, V.A. Sokol

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 324 KB

english, 1997

21

Dielectric barriers for Cu metallization systems

M. Vogt, M. Kachel, M. Plötner, K. Drescher

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 375 KB

english, 1997

22

Evaluation of LPCVD MeSiN (MeTa, Ti, W, Re) diffusion barriers for Cu metallizations

E. Blanquet, A.M. Dutron, V. Ghetta, C. Bernard, R. Madar

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 430 KB

english, 1997

23

OMCVD TiN diffusion barrier for copper contact and via/interconnects structures

C. Marcadal, E. Richard, J. Torres, J. Palleau, L. Ulmer, L. Perroud, J. Piaguet, G. Rolland

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 353 KB

english, 1997

24

Investigation of copper diffusion in SiOF, TEOS oxide and TCA oxide using bias thermal stress (BTS) tests

A. Abdul-Hak, C. Ahrens, W. Hasse, J. Ullmann

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 281 KB

english, 1997

25

Thermal stress effects on capacitance and current characteristics of Cu/Si and Cu/TiN/Si Schottky-diodes

C. Ahrens, R. Ferretti, G. Friese, J.O. Weidner

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 507 KB

english, 1997

26

TiN diffusion barriers for copper metallization

J. Baumann, T. Werner, A. Ehrlich, M. Rennau, Ch. Kaufmann, T. Gessner

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 457 KB

english, 1997

27

W/TiN double layers as barrier system for use in Cu metallization

J. Baumann, M. Markert, T. Werner, A. Ehrlich, M. Rennau, Ch. Kaufmann, T. Gessner

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 442 KB

english, 1997

28

The interaction between different barrier metals and the copper surface during the chemical-mechanical polishing

D. Zeidler, Z. Stavreva, M. Plötner, K. Drescher

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 305 KB

english, 1997

29

Study of Ta(N,O) diffusion barrier stability: analytical and electrical characterization of low level Cu contamination in Si

M. Stavrev, D. Fischer, C. Wenzel, T. Heiser

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 454 KB

english, 1997

30

Polymers for high-performance interconnects: Invited lecture

Kelly J. Taylor, Shin-Puu Jeng, Mona Eissa, Justin Gaynor, Hoan Nguyen

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 271 KB

english, 1997

31

Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 μm inter-metal dielectric application

L. Baud, G. Passemard, Y. Gobil, H. M'Saad, A. Corte, F. Pires, P. Fugier, P. Noel, P. Rabinzohn, I. Beinglass

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 513 KB

english, 1997

32

SiOFx and SiO2 deposition in an ECR-HDP reactor: Tool characterisation and film analysis

A.J. Kalkman, D.J. den Boer, H. Fukuda, J.B.C. van der Hilst, G.C.A.M. Janssen, S. Radelaar

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 321 KB

english, 1997

33

Integration evaluation of low permittivity silicon based spin on materials as IMD

F. Pires, P. Noël, Ch. Lecornec, G. Passemard, D. Louis, E. Lajoinie

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 320 KB

english, 1997

34

Cleaning after silicon oxide CMP

F. Tardif, I. Constant, T. Lardin, O. Demolliens, M. Fayolle, Y. Gobil, J. Palleau, J. Torres

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 339 KB

english, 1997

35

Low temperature AlCu planarization by PVD AlCuGe alloys: Invited lecture

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 438 KB

english, 1997

36

Sub-half micron metallization using high-pressure Al: Invited lecture

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 361 KB

english, 1997

37

Al reflow studies for deep-submicron structures: properties and microstructure

M.N. Webster, A.G. Dirks

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 251 KB

english, 1997

38

High pressure aluminium for sub-micron vias using a liquid transducer

J.F. Jongste, X. Li, J.P. Lokker, G.C.A.M. Janssen, S. Radelaar

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 479 KB

english, 1997

39

Planar aluminum interconnection formed by electrochemical anodizing technique

V. Surganov, A. Mozalev

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 357 KB

english, 1997

40

Planarized aluminum submicron structure formation for interconnections of ULSI by laser lithography and electrochemical anodizing

V. Surganov, A. Mozalev, V. Boksha

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 307 KB

english, 1997

41

Modification of Al-based metallization for improved surface morphology

Michał Zaborowski, Adam Barcz

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 290 KB

english, 1997

42

W CMP process integration: Consumables evaluation — electrical results and end point detection

M. Fayolle, E. Sicurani, Y. Morand

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 305 KB

english, 1997

43

Reactive ion etching of metal stack consisting of an aluminium alloy, WGex, barrier and Ti adhesion layer

E. Sabouret, C. Schaffnit, J.F. Jongste, G.C.A.M. Janssen, S. Radelaar

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 528 KB

english, 1997

44

W/WNx as a low-resistance gate material and local interconnect

C.J. Galewski, C.A. Sans, P.N. Gadgil, L.D. Matthysse, N. Zetterquist

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 537 KB

english, 1997

45

Reduction of molybdenum resistivity by a seed layer of TiW

S. Franssila, H. Kattelus, E. Nykänen

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 413 KB

english, 1997

46

Formation of Al3Ti during physical vapour deposition of titanium on aluminium

L. Ulmer, F. Pitard, D. Poncet, O. Demolliens

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 354 KB

english, 1997

47

3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios

E. Bär, J. Lorenz, H. Ryssel

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 344 KB

english, 1997

48

Titanium monophosphide (TiP) layers as potential diffusion barriers

R. Leutenecker, B. Fröschle, P. Ramm

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 353 KB

english, 1997

49

Metal etcher characterisation using flash memory cell as charging sensor

S. Alba, A. Colognese, E. Ghio

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 448 KB

english, 1997

50

The effect of an additional Ti layer in a sub-μm double level TiTiNAlSiCuTiN metallization for a CMS-LOGIC-process

K.-H. Stegemann, C. Beyer, V. Heinig, V. Kahlert, J. Pahner

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 599 KB

english, 1997

51

Low temperature rapid thermal low pressure chemical vapor deposition of 〈111〉 oriented TiN layers from the TiCl4NH3H2 gaseous phase

A. Bouteville, L. Imhoff, J.C. Remy

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 294 KB

english, 1997

52

Control of PVD TiN thickness measurements

Leo Asinovsky, Larry E. Frisa

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 341 KB

english, 1997

53

Further study on selective TiSi2 deposition by CVD

D. Maury, P. Gayet, J.L. Regolini

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 299 KB

english, 1997

54

Kinetics of the C49–C54 phase transition in TiSi2: New indications from sheet resistance, infrared spectroscopy and molecular dynamics simulations

M.G. Grimaldi, F. La Via, V. Raineri, S. Bocelli, M. Galli, F. Marabelli, F. Bonoli, M. Iannuzzi, L. Miglio

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 484 KB

english, 1997

55

Advances in the formation of C54TiSi2 with an interposed refractory metal layer: some properties

Aliette Mouroux, Wlodek Kaplan, Shi-Li Zhang, Sture Petersson

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 377 KB

english, 1997

56

Characterization of thin TiSi2 films by spectroscopic ellipsometry and thermal wave analysis

I. Kasko, S. Kal, H. Ryssel

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 422 KB

english, 1997

57

A self-aligned silicide technology with the Mo/Ti bilayer system

W. Kaplan, A. Mouroux, S.-L. Zhang, C.S. Petersson

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 330 KB

english, 1997

58

Arsenic solubility in single crystalline cobalt disilicide

Dominique Mangelinck, Juan Cardenas, Bengt G. Svensson

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 399 KB

english, 1997

59

Thermal stability of thin CoSi2 layers grown on amorphous silicon

F. La Via, A. Alberti, V. Raineri, S. Ravesi, E. Rimini

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 415 KB

english, 1997

60

Epitaxial CoSi2 formation by Co/Hf bilayers on Si(100)

B. Gebhardt, M. Falke, H. Giesler, S. Teichert, G. Beddies, H.-J. Hinneberg

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 583 KB

english, 1997

61

EXAFS investigation of Co sites in CoSi2 film grown by ion beam-assisted deposition

A. Terrasi, F. La Via, F. D'Acapito, S. Mobilio

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 393 KB

english, 1997

62

Formation of thin surface films of Ni-, V- and Co-silicide by low-energy implantation with a metal vapour vacuum arc ion source

Yanwen Zhang, Harry J. Whitlow, Tonghe Zhang

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 438 KB

english, 1997

63

Formation of ultra-thin PtSi layers with a 2-step silicidation process

R.A. Donaton, S. Jin, H. Bender, M. Zagrebnov, K. Baert, K. Maex, A. Vantomme, G. Langouche

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 449 KB

english, 1997

64

Submicrometer patterning of cobaltdisilicide layers by local oxidation

F. Klinkhammer, M. Dolle, L. Kappius, S. Mantl

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 459 KB

english, 1997

65

Some electronic properties of single crystalline NiSi

B. Meyer, U. Gottlieb, O. Laborde, H. Yang, J.C. Lasjaunias, A. Sulpice, R. Madar

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 266 KB

english, 1997

66

Reaction of thin Ni films with (001) 3CSiC at 700°C

Stefan M. Gasser, A. Bächli, Carol M. Garland, E. Kolawa, M.-A. Nicolet

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 330 KB

english, 1997

67

Sputter deposition and characterization of TiB2/TiSi2 bilayer contact structure

G. Sade, J. Pelleg

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 425 KB

english, 1997

68

Raman study of tungsten disilicide formation in thin films

O. Chaix-Pluchery, G. Lucazeau, V. Aubry-Fortuna, F. Meyer, R. Madar

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 433 KB

english, 1997

69

Lattice dynamics of transition metal disilicides

O. Chaix-Pluchery, J. Bossy, H. Schober, U. Gottlieb, O. Laborde, R. Madar

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 333 KB

english, 1997

70

Optical properties of amorphous and crystalline FeSi2, TiSi2, MoSi2 and CrSi2 films

Yu.V. Kudryavtsev, M.V. Belous, Yu.N. Makogon, S.I. Sidorenko, T.T. Silakova

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 312 KB

english, 1997

71

Size dependent phenomena during the formation of Gd and Fe silicide thin films

G.L. Molnár, G. Petö, Z.E. Horváth, E. Zsoldos, N.Q. Khánh

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 463 KB

english, 1997

72

What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds?

V. Aubry-Fortuna, J.-L. Perrossier, M. Mamor, F. Meyer, C. Frojdh, G. Thungstrom, C.S. Petersson, S. Bodnar, J.L. Regolini

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 368 KB

english, 1997

73

Local nucleation and lateral crystallization of the silicide phases in the CoSi2 buffer layer of YBa2Cu3O7−x/CoSi2/Si structure

I. Belousov, E. Rudenko, S. Linzen, P. Seidel

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 425 KB

english, 1997

74

Preface

Guillermo Bomchil

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 100 KB

english, 1997

75

Author index volumes 37/38

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 506 KB

english, 1997

76

Editorial Board

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 64 KB

english, 1997