Feasibility of 250 nm gate patterning using i-line with OPC

Feasibility of 250 nm gate patterning using i-line with OPC

V. Van Driessche, J. Finders, A. Tritchkov, K. Ronse, L. Van den hove, P. Tzviatkov
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Volume:
41-42
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s0167-9317(98)00024-0
File:
PDF, 330 KB
english, 1998
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