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Influence of etching parameters on the defect profile and the depth of damage of AlGaAs induced by ion beam etching
K. Otte, F. Frost, A. Schindler, G. Lippold, V. Gottschalch, R.-H. Flagmeyer, F. BiglVolume:
41-42
Year:
1998
Language:
english
Pages:
4
DOI:
10.1016/s0167-9317(98)00099-9
File:
PDF, 298 KB
english, 1998