Single and dual p-doped channel In0.52Al0.48 As/InxGa1-xAs...

IEEE Transactions on Electron Devices 1992 Vol. 39; Iss. 3

Single and dual p-doped channel In0.52Al0.48 As/InxGa1-xAs (x=0.53, 0.65) FET's and the role of doping

Chan, Y.-J., Pavlidis, D.
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Volume:
39
Year:
1992
Language:
english
Pages:
7
DOI:
10.1109/16.123464
File:
PDF, 766 KB
english, 1992
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