Volume 39; Issue 3

IEEE Transactions on Electron Devices

Volume 39; Issue 3

1

Single and dual p-doped channel In0.52Al0.48 As/InxGa1-xAs (x=0.53, 0.65) FET's and the role of doping

Chan, Y.-J., Pavlidis, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 766 KB

english, 1992

2

Simulation of ultra-small GaAs MESFET using quantum moment equations

Zhou, J.-R., Ferry, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 667 KB

english, 1992

3

InGaAs/In(AlGa)As RHET's with InAs pseudomorphic base

Imamura, K., Adachihara, T., Mori, T., Muto, S., Yokoyama, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 504 KB

english, 1992

4

Ion-implanted In(x)Ga(1-x)As MESFET's on GaAs substrate for low-cost millimeter-wave IC application

Feng, M., Lau, C.-L.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 903 KB

english, 1992

5

A high-speed 16-kb GaAs SRAM of less than 5 ns using triple-level metal interconnection

Noda, M., Matsue, S., Sakai, M., Sumitani, K., Nakano, H., Oku, T., Makino, H., Nishitani, K., Otsubo, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 865 KB

english, 1992

6

Effect of hot-electron injection of high-frequency characteristics of abrupt In0.52(Ga1-xAlx)0.48 As/InGaAs HBT's

Fukano, H., Nakajima, H., Ishibashi, T., Takanashi, Y., Fujimoto, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 734 KB

english, 1992

7

Effect of illumination on the characteristics of a proposed hetero-MIS diode

Chakrabarti, P., Abraham, B.R., Dhingra, A., Das, A., Sharan, B.S., Maheshwari, V.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 691 KB

english, 1992

8

Noise performance at cryogenic temperatures at AlGaAs/InGaAs HEMT's with 0.15-μm T-shaped WSix gates

Joshin, K., Mimino, Y., Ohmura, S., Hirachi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 546 KB

english, 1992

9

Nanostructure resonances

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 283 KB

english, 1992

10

Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x>0.53) In0.52Al 0.48As/InxGa1-xAs HEMT's

Ng, G.I., Pavlidis, D., Tutt, M., Weiss, R.M., Marsh, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.02 MB

english, 1992

11

AlAs etch-stop layers for InGaAlAs/InP heterostructure devices and circuits

Broekaert, T.P.E., Fonstad, C.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 596 KB

english, 1992

12

Dependence of thin-oxide films quality on surface microroughness

Ohmi, T., Miyashita, M., Itano, M., Imaoka, T., Kawanabe, I.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 913 KB

english, 1992

13

Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes

Hayat, M.M., Saleh, B.E.A., Teich, M.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 664 KB

english, 1992

14

Time and frequency response of avalanche photodiodes with arbitrary structure

Kahraman, G., Saleh, B.E.A., Sargeant, W.L., Teich, M.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 825 KB

english, 1992

15

Improvements in electrostatic discharge performance of InGaAsP semiconductor lasers by facet passivation

DeChiaro, L.F., Sandroff, C.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 619 KB

english, 1992

16

Electric micromotor dynamics

Bart, S.F., Mehregany, M., Tavrow, L.S., Lang, J.H., Senturia, S.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.15 MB

english, 1992

17

Fundamental characteristics of a magnetoresistive sensor using Y 1Ba2Cu3O7-x ceramic superconducting films

Nojima, H., Shintaku, H., Nagata, M., Kataoka, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 569 KB

english, 1992

18

Requirements for accurate MOS-SOI device simulations

Rios, R., Amantea, R., Smeltzer, R.K., Rothwarf, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 706 KB

english, 1992

19

Delay analysis of BiNMOS driver including high current transients

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 520 KB

english, 1992

20

Modulating the bipolar junction transistor subjected to neutron irradiation for integrated circuit simulation

Liou, J.J., Yuan, J.-S., Shakouri, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 482 KB

english, 1992

21

Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various pressures

Dimitriadis, C.A., Coxon, P.A., Dozsa, L., Papadimitriou, L., Economou, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 907 KB

english, 1992

22

High-field mobility effects in reoxidized nitrided oxide (ONO) transistors

Cable, J.S., Woo, J.C.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 573 KB

english, 1992

23

An analytical threshold-voltage model of trench-isolated MOS devices with nonuniformly doped substrates

Chung, S.S.-S., Li, T.-C.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 801 KB

english, 1992

24

Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction

Suzuki, K., Nakayama, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 580 KB

english, 1992

25

The effects of carrier-velocity saturation on high-current BJT output resistance

Lee, S.-G., Fox, R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 467 KB

english, 1992

26

Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage

Nishinohara, K., Shigyo, N., Wada, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 636 KB

english, 1992

27

Ultra-fast (0.5-μm) CMOS circuits in fully depleted SOI films

Kamgar, A., Hillenius, S.J., Cong, H.-I.L., Field, R.L., Lindenberger, W.S., Celler, G.K., Trimble, L.E., Sheng, T.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 938 KB

english, 1992

28

A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies

Baccus, B., Wada, T., Shigyo, N., Norishima, M., Nakajima, H., Inou, K., Iinuma, T., Iwai, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.54 MB

english, 1992

29

New technique for lifetime and surface/interface recombination velocity measurement in thin semiconductor layers

Wang, C.H., Neugroschel, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 931 KB

english, 1992

30

Sub-half-micrometer concave MOSFET with double LDD structure

Hieda, K., Sunouchi, K., Takato, H., Nitayama, A., Horiguchi, F., Masuoka, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 710 KB

english, 1992

31

Radiation-induced increase in the inversion layer mobility of reoxidized nitrided oxide MOSFETs

Dunn, G.J., Gross, B.J., Sodini, C.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 855 KB

english, 1992

32

Performance-driven scaling of BiCMOS technology

Raje, P.A., Saraswat, K.C., Cham, K.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 994 KB

english, 1992

33

High-speed soft-error-immune ECL circuits with fully isolated transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 548 KB

english, 1992

34

High-frequency transport of two-dimensional hot electrons in GaAs and In0.53Ga0.47As quantum wells at low temperatures

Chattopadhyay, D., Basu, P.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 547 KB

english, 1992

35

A comprehensive method combining deep-depletion profiling and capacitance transients to evaluate energy and depth distribution of MOS bulk defects

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 544 KB

english, 1992

36

A steady-state VDMOS transistor model

Paredes, J., Hidalgo, S., Berta, F., Fernandez, J., Rebollo, J., Millan, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 720 KB

english, 1992

37

Design and testing of an electron gun producing a segmented sheet beam for a quasi-optical gyrotron

Read, M.E., Dudas, A.J., Petillo, J.J., Tran, M.Q.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 674 KB

english, 1992

38

The inhomogeneous dielectric loading effects of practical helix supports on the interaction impedance of the slow-wave structure of a TWT

Jain, P.K., Basu, B.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 518 KB

english, 1992

39

Silicon trench undercutting caused by the preferential plasma etching of surface-implanted-regions

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 259 KB

english, 1992

40

Breakdown walkout in AlAs/GaAs HEMTs

Chao, P.C., Shur, M., Kao, M.Y., Lee, B.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 364 KB

english, 1992

41

An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors

Blakey, P.A., Joardar, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 336 KB

english, 1992

42

The offset voltage of heterojunction bipolar transistors using two-dimensional numerical simulation with current boundary condition

Liou, L.L., Ebel, J., Huang, C.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 468 KB

english, 1992

43

Digital GaAs FET versus Si FET gate delay as predicted from the electron velocity

Fulkerson, D.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 320 KB

english, 1992

44

Comments on "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFETs" [with reply]

Fulkerson, D.E., Fischetti, M.V., Laux, S.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 212 KB

english, 1992

45

Comments on "A self-backgating GaAs MESFET model for low-frequency anomalies

Reynoso-Harnandez, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 121 KB

english, 1992

46

A novel method to characterize MOS transistors with mixed gate dielectric technologies

Siergiej, R.R., White, M.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 437 KB

english, 1992

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@1delivery.pm

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски