High-field mobility effects in reoxidized nitrided oxide...

IEEE Transactions on Electron Devices 1992 Vol. 39; Iss. 3

High-field mobility effects in reoxidized nitrided oxide (ONO) transistors

Cable, J.S., Woo, J.C.S.
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Volume:
39
Year:
1992
Language:
english
Pages:
7
DOI:
10.1109/16.123485
File:
PDF, 573 KB
english, 1992
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