An analytical threshold-voltage model of trench-isolated...

IEEE Transactions on Electron Devices 1992 Vol. 39; Iss. 3

An analytical threshold-voltage model of trench-isolated MOS devices with nonuniformly doped substrates

Chung, S.S.-S., Li, T.-C.
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Volume:
39
Year:
1992
Language:
english
Pages:
9
DOI:
10.1109/16.123486
File:
PDF, 801 KB
english, 1992
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